发明授权
- 专利标题： Low-K SiC copper diffusion barrier films
- 专利标题（中）： 低K SiC铜扩散阻挡膜
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申请号： US12497322申请日： 2009-07-02
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公开(公告)号： US07968436B1公开(公告)日： 2011-06-28
- 发明人: Yongsik Yu , Karen Billington , Xingyuan Tang , Haiying Fu , Michael Carris , William Crew
- 申请人： Yongsik Yu , Karen Billington , Xingyuan Tang , Haiying Fu , Michael Carris , William Crew
- 申请人地址： US CA San Jose
- 专利权人： Novellus Systems, Inc.
- 当前专利权人： Novellus Systems, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.
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