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    Low-k SiC copper diffusion barrier films
    1.
    发明授权
    Low-k SiC copper diffusion barrier films 有权
    低k SiC铜扩散阻挡膜

    公开(公告)号：US07573061B1

    公开(公告)日：2009-08-11

    申请号：US11893490

    申请日：2007-08-15

    申请人： Yongsik Yu ,  Karen Billington ,  Xingyuan Tang ,  Haiying Fu ,  Michael Carris ,  William Crew

    发明人： Yongsik Yu ,  Karen Billington ,  Xingyuan Tang ,  Haiying Fu ,  Michael Carris ,  William Crew

    IPC分类号： H01L35/24 ,  H01L51/00

    CPC分类号： H01L21/76832 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/76834 ,  Y10S257/914 ,  Y10S438/931

    摘要： Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.

    摘要翻译： 具有低介电常数的铜扩散阻挡膜适用于各种铜/金属间电介质集成方案。 根据本发明的铜扩散阻挡膜由一个或多个碳化硅层组成，至少一个碳化硅层具有至少40％碳（C）的组成，例如约45-60％ 碳（C）。 膜的高碳含量层将具有其中C与Si的比率大于2:1的组成; 或> 3：1; 或> 4：1; 或> 5.1。 高碳含量铜扩散阻挡膜相对于常规阻挡材料具有降低的有效k。

    Low-k SiC copper diffusion barrier films
    2.
    发明授权
    Low-k SiC copper diffusion barrier films 有权
    低k SiC铜扩散阻挡膜

    公开(公告)号：US07282438B1

    公开(公告)日：2007-10-16

    申请号：US10869474

    申请日：2004-06-15

    申请人： Yongsik Yu ,  Karen Billington ,  Xingyuan Tang ,  Haiying Fu ,  Michael Carris ,  William Crew

    发明人： Yongsik Yu ,  Karen Billington ,  Xingyuan Tang ,  Haiying Fu ,  Michael Carris ,  William Crew

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76832 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/76834 ,  Y10S257/914 ,  Y10S438/931

    摘要： Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.

    摘要翻译： 具有低介电常数的铜扩散阻挡膜适用于各种铜/金属间电介质集成方案。 根据本发明的铜扩散阻挡膜由一个或多个碳化硅层组成，至少一个碳化硅层具有至少40％碳（C）的组成，例如约45-60％ 碳（C）。 膜的高碳含量层将具有其中C与Si的比率大于2:1的组成; 或> 3：1 或> 4：1; 或> 5.1。 高碳含量铜扩散阻挡膜相对于常规阻挡材料具有降低的有效k。

    UV TREATMENT FOR CARBON-CONTAINING LOW-K DIELECTRIC REPAIR IN SEMICONDUCTOR PROCESSING
    3.
    发明申请
    UV TREATMENT FOR CARBON-CONTAINING LOW-K DIELECTRIC REPAIR IN SEMICONDUCTOR PROCESSING 审中-公开
    用于在半导体加工中含碳低K电介质修复的紫外线处理

    公开(公告)号：US20110045610A1

    公开(公告)日：2011-02-24

    申请号：US12940324

    申请日：2010-11-05

    申请人： Bart van Schravendijk ,  William Crew

    发明人： Bart van Schravendijk ,  William Crew

    IPC分类号： H01L21/26

    CPC分类号： H01L21/76814 ,  H01L21/3105 ,  H01L21/76825

    摘要： A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH3 groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH3 groups, may be applied to repair damage caused in a subsequent planarization operation.

    摘要翻译： 一种用于紫外线（UV）处理含碳低k电介质的方法可以进行过程诱导的损伤修复。 该方法特别适用于镶嵌加工的上下文。 一种方法提供了通过在衬底上沉积含碳的低k电介质层并在低k电介质层中形成沟槽来形成半导体器件，所述沟槽具有以底部结束的侧壁。 然后将沟槽暴露于UV辐射和任选的-CH 3基团的气相源，以修复由沟槽形成过程（通常为蚀刻，灰化）引起的沟槽侧壁和底部的含碳低k材料的损伤， 和湿或干洗）。 可以使用具有或不具有-CH 3基团的气相源的类似处理来修复在随后的平坦化操作中引起的损伤。

    UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
    5.
    发明授权
    UV treatment for carbon-containing low-k dielectric repair in semiconductor processing 有权
    半导体加工中含碳低k电介质修复的UV处理

    公开(公告)号：US07851232B2

    公开(公告)日：2010-12-14

    申请号：US11590661

    申请日：2006-10-30

    申请人： Bart van Schravendijk ,  William Crew

    发明人： Bart van Schravendijk ,  William Crew

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76814 ,  H01L21/3105 ,  H01L21/76825

    摘要： A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH3 groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH3 groups, may be applied to repair damage caused in a subsequent planarization operation.

    摘要翻译： 一种用于紫外线（UV）处理含碳低k电介质的方法可以进行过程诱导的损伤修复。 该方法特别适用于镶嵌加工的上下文。 一种方法提供了通过在衬底上沉积含碳的低k电介质层并在低k电介质层中形成沟槽来形成半导体器件，所述沟槽具有以底部结束的侧壁。 然后将沟槽暴露于UV辐射和任选的-CH 3基团的气相源，以修复由沟槽形成过程（通常为蚀刻，灰化）引起的沟槽侧壁和底部的含碳低k材料的损伤， 和湿或干洗）。 可以使用具有或不具有-CH 3基团的气相源的类似处理来修复在随后的平坦化操作中引起的损伤。

    Novel film for copper diffusion barrier
    7.
    发明申请
    Novel film for copper diffusion barrier 有权
    铜扩散屏障的新型膜

    公开(公告)号：US20060019486A1

    公开(公告)日：2006-01-26

    申请号：US11234808

    申请日：2005-09-23

    申请人： Yongsik Yu ,  Karen Billington ,  Robert Hepburn ,  Michael Carris ,  William Crew

    发明人： Yongsik Yu ,  Karen Billington ,  Robert Hepburn ,  Michael Carris ,  William Crew

    IPC分类号： H01L21/4763 ,  H01L21/31

    CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.

    摘要翻译： 本发明提供一种适用于半导体器件的低介电常数铜扩散阻挡膜及其制造方法。 膜的一些实施例由掺杂有硼的硅基材料形成。 至少部分地由氮化硼形成其它实施例。 一些这样的实施方案包括包含氧和/或碳的防潮膜。 在大气湿度的存在下，铜扩散阻挡层的优选实施例保持小于4.5的稳定介电常数。

    Low-K SiC copper diffusion barrier films
    8.
    发明授权
    Low-K SiC copper diffusion barrier films 有权
    低K SiC铜扩散阻挡膜

    公开(公告)号：US07968436B1

    公开(公告)日：2011-06-28

    申请号：US12497322

    申请日：2009-07-02

    申请人： Yongsik Yu ,  Karen Billington ,  Xingyuan Tang ,  Haiying Fu ,  Michael Carris ,  William Crew

    发明人： Yongsik Yu ,  Karen Billington ,  Xingyuan Tang ,  Haiying Fu ,  Michael Carris ,  William Crew

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76832 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/76834 ,  Y10S257/914 ,  Y10S438/931

    摘要： Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.

    摘要翻译： 具有低介电常数的铜扩散阻挡膜适用于各种铜/金属间电介质集成方案。 根据本发明的铜扩散阻挡膜由一个或多个碳化硅层组成，至少一个碳化硅层具有至少40％碳（C）的组成，例如约45-60％ 碳（C）。 膜的高碳含量层将具有其中C与Si的比率大于2:1的组成; 或> 3：1; 或> 4：1; 或> 5.1。 高碳含量铜扩散阻挡膜相对于常规阻挡材料具有降低的有效k。

    UV TREATMENT FOR CARBON-CONTAINING LOW-K DIELECTRIC REPAIR IN SEMICONDUCTOR PROCESSING
    9.
    发明申请
    UV TREATMENT FOR CARBON-CONTAINING LOW-K DIELECTRIC REPAIR IN SEMICONDUCTOR PROCESSING 有权
    用于在半导体加工中含碳低K电介质修复的紫外线处理

    公开(公告)号：US20100261349A1

    公开(公告)日：2010-10-14

    申请号：US11590661

    申请日：2006-10-30

    申请人： Bart van Schravendijk ,  William Crew

    发明人： Bart van Schravendijk ,  William Crew

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76814 ,  H01L21/3105 ,  H01L21/76825

    摘要： A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH3 groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH3 groups, may be applied to repair damage caused in a subsequent planarization operation.

    摘要翻译： 一种用于紫外线（UV）处理含碳低k电介质的方法可以进行过程诱导的损伤修复。 该方法特别适用于镶嵌加工的上下文。 一种方法提供了通过在衬底上沉积含碳的低k电介质层并在低k电介质层中形成沟槽来形成半导体器件，所述沟槽具有以底部结束的侧壁。 然后将沟槽暴露于UV辐射和任选的-CH 3基团的气相源，以修复由沟槽形成过程（通常为蚀刻，灰化）引起的沟槽侧壁和底部的含碳低k材料的损伤， 和湿或干洗）。 可以使用具有或不具有-CH 3基团的气相源的类似处理来修复在随后的平坦化操作中引起的损伤。