发明授权
US07968469B2 Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
有权
在具有可变高度接地返回路径的等离子体反应器中处理工件的方法以控制等离子体离子密度均匀性
- 专利标题： Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
- 专利标题（中）： 在具有可变高度接地返回路径的等离子体反应器中处理工件的方法以控制等离子体离子密度均匀性
-
申请号： US11733984申请日： 2007-04-11
-
公开(公告)号： US07968469B2公开(公告)日： 2011-06-28
- 发明人: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
- 申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理商 Robert M. Wallace
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.