发明授权
- 专利标题: Power semiconductor module for inverter circuit system
- 专利标题(中): 用于逆变器电路系统的功率半导体模块
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申请号: US12886904申请日: 2010-09-21
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公开(公告)号: US07968925B2公开(公告)日: 2011-06-28
- 发明人: Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito
- 申请人: Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Crowell & Moring LLP
- 优先权: JP2007-096536 20070402
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
A double-face-cooled semiconductor module with an upper arm and a lower arm of an inverter circuit includes first and second heat dissipation members, each having a heat dissipation surface on one side and a conducting member formed on another side through an insulation member. On the conducting member on the first dissipation plate is provided with a fixing portion that fixes a collector surface of the semiconductor chip and a gate conductor connected to a gate terminal of the semiconductor module. The gate electrode terminal and the gate conductor are wire bonded. The conducting member on the second heat dissipation member is connected to an emitter surface of the semiconductor chip connected to the first heat dissipation member. The productivity and reliability are improved by most of formation operations for the upper and lower arms series circuit on one of the heat dissipation member.
公开/授权文献
- US20110069455A1 Power Semiconductor Module for Inverter Circuit System 公开/授权日:2011-03-24
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