发明授权
US07969013B2 Through silicon via with dummy structure and method for forming the same
有权
通过具有虚拟结构的硅通孔及其形成方法
- 专利标题： Through silicon via with dummy structure and method for forming the same
- 专利标题（中）： 通过具有虚拟结构的硅通孔及其形成方法
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申请号： US12791978申请日： 2010-06-02
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公开(公告)号： US07969013B2公开(公告)日： 2011-06-28
- 发明人: Chih-Hua Chen , Chen-Shien Chen , Chen-Cheng Kuo , Wen-Wei Shen
- 申请人： Chih-Hua Chen , Chen-Shien Chen , Chen-Cheng Kuo , Wen-Wei Shen
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman Ham & Berner, LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A through silicon via structure includes a top pad and a vertical conductive post that is connected to the top pad. The top pad covers a wider area than the cross section of the vertical conductive post. An interconnect pad is formed at least partially below the top pad. An under layer is also formed at least partially below the top pad. At least one dummy structure connects the top pad and the under layer to fasten the top pad and the interconnect pad.