发明授权
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US12623794申请日: 2009-11-23
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公开(公告)号: US07969237B2公开(公告)日: 2011-06-28
- 发明人: Tetsuya Fujita , Yousuke Hagiwara
- 申请人: Tetsuya Fujita , Yousuke Hagiwara
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Turocy & Watson, LLP
- 优先权: JP2009-094271 20090408
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
A semiconductor integrated circuit device includes at least one first transistor configured to control conductance between an input power line and an output power line, at least one second transistor configured to control conductance between the input power line and the output power line, a first buffer configured to supply a first control signal for driving the at least one first transistor to a first control line connected to the at least one first transistor, a second buffer configured to generate a second control signal for driving the at least one second transistor upon receipt of the first control signal supplied through the first control line and supply the second control signal to a second control line connected to the at least one second transistor, and at least one capacitor connected between the first control line and the output power line.
公开/授权文献
- US20100259316A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 公开/授权日:2010-10-14
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