摘要:
A semiconductor integrated circuit device includes at least one first transistor configured to control conductance between an input power line and an output power line, at least one second transistor configured to control conductance between the input power line and the output power line, a first buffer configured to supply a first control signal for driving the at least one first transistor to a first control line connected to the at least one first transistor, a second buffer configured to generate a second control signal for driving the at least one second transistor upon receipt of the first control signal supplied through the first control line and supply the second control signal to a second control line connected to the at least one second transistor, and at least one capacitor connected between the first control line and the output power line.
摘要:
A semiconductor integrated circuit device includes at least one first transistor configured to control conductance between an input power line and an output power line, at least one second transistor configured to control conductance between the input power line and the output power line, a first buffer configured to supply a first control signal for driving the at least one first transistor to a first control line connected to the at least one first transistor, a second buffer configured to generate a second control signal for driving the at least one second transistor upon receipt of the first control signal supplied through the first control line and supply the second control signal to a second control line connected to the at least one second transistor, and at least one capacitor connected between the first control line and the output power line.
摘要:
Method to reduce NOx contained in an exhaust gas by including an oxidation catalyst device and a selective reduction type NOx catalyst device, which are arranged in this order from an upstream side, and a NOx purification system. Whether a volume of NO2 adsorbed in the oxidation catalyst device increases or decreases is estimated, and a flow rate of exhaust gas which bypasses the oxidation catalyst device on a basis of the increase or decrease in the estimated volume of adsorbed NO2 is controlled. This avoids incorrect supply of ammonia.
摘要:
In an arrangement structure for a door wire harness, the door wire harness is arranged in a door of a vehicle body and is spanned in a space between the door and the vehicle body inside a vehicle room beyond a weather strip. The door wire harness is drawn out of a space between a door inner panel and a door trim at a door side and is fixed on the door at a wire harness drawing-out position. A door side fixing position of the door wire harness is shifted from a vehicle body side fixing position of the door wire harness in a vertical direction. A spanning section of the door wire harness between the door side fixing position and the vehicle body side fixing position is sheathed by a grommet having a flexible bellows-like tube portion and made of rubber or resin. The spanning section of the door wire harness is bent in an S-shaped configuration in a space between opposed surfaces of the door and the vehicle body when the door is closed. The door wire harness is changed from the S-shaped configuration to a straight line configuration when the door is opened.
摘要:
In an arranging structure of a wire harness for a door, the wire harness is spanned between a door of a motor vehicle and a vehicle body at an indoor side inside of a weather strip. The wire harness is drawn out from a space between a door inner panel and a door trim at the door side and is provided with an excess length portion that follows opening and closing operations of the door. The excess length portion is drawn out from the space when the door is opened. The excess length portion is drawn along an arcuate outer periphery of a speaker disposed in the space to be contained in the space when the door is closed.
摘要:
According to the present invention, there is provided a semiconductor device including a power supply circuit which receives an external power supply voltage supplied, and outputs an internal power supply voltage not higher than the external power supply voltage; a system module which receives the internal power supply voltage, and performs a predetermined operation; and a performance monitor circuit which measures a processing speed of said system module when the internal power supply voltage is applied, and, on the basis of the processing speed, outputs a first control signal which requests to set the external power supply voltage at a first level, and a second control signal which requests said power supply circuit to set the internal power supply voltage at a second level. The power supply circuit outputs the internal power supply voltage having the second level on the basis of the second control signal applied thereto.
摘要:
This disclosure concerns semiconductor integrated circuit includes a semiconductor substrate; a plurality of well regions formed on one surface of the semiconductor substrate and electrically isolated from each other; a plurality of MOS transistors formed in the well regions; and a substrate bias generator applying substrate biases to the individual well regions based on actually measured process-derived variance of the MOS transistors in threshold voltage to bring the threshold voltages of the respective MOS transistors into conformity with a normal threshold voltage.
摘要:
A semiconductor integrated circuit device permitting the chip area to be as small as possible without lowering the maximum arrival voltage is provided. This semiconductor integrated circuit device includes first to n-th charge pump circuits respectively driven on the basis of clocks CLK1, CLK2 to bias semiconductor substrate or well formed at the semiconductor substrate, wherein the i-th (i=1, . . . n-1) charge pump circuit is caused to be of a structure in which the current drivability is large, but the maximum arrival voltage is low as compared to the (i+1)-th charge pump circuit.
摘要:
An image forming apparatus which forms an image by transferring a developed image formed on an image holding member onto a transfer material by a transfer unit. The image forming apparatus is further provided with an induced-charge density suppressing unit. This induced-charge density suppressing unit suppresses the density of electric charge induced in the area of the image holding member which is opposite to an image forming member as a result of stoppage of the image forming member that is opposite to the image holding member and is electrostatically charged.
摘要:
Disclosed is a one-component developing apparatus in which a developing agent scale-off member such as a wire member is provided parallel to the surface of the developing agent carrier so as to be in contact with or in close proximity to a developing agent carrier. A developing agent thin layer formed on the surface of the developing agent carrier which did not contribute to development in a development region comes into contact with the developing agent scale-off member so as to be forcibly scaled off of the developing agent carrier, so that the image history is erased. When the developing agent scale-off member is made to vibrate, or a bias voltage is applied between the developing agent scale-off member and the developing agent carrier, the developing agent may be scaled off more efficiently.