发明授权
US07969239B2 Charge pump circuit and a novel capacitor for a memory integrated circuit
有权
电荷泵电路和用于存储器集成电路的新型电容器
- 专利标题: Charge pump circuit and a novel capacitor for a memory integrated circuit
- 专利标题(中): 电荷泵电路和用于存储器集成电路的新型电容器
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申请号: US12569832申请日: 2009-09-29
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公开(公告)号: US07969239B2公开(公告)日: 2011-06-28
- 发明人: Hieu Van Tran , Hung Q. Nguyen , Thuan T. Vu , Anh Ly
- 申请人: Hieu Van Tran , Hung Q. Nguyen , Thuan T. Vu , Anh Ly
- 申请人地址: US CA Sunnyvale
- 专利权人: Silicon Storage Technology, Inc.
- 当前专利权人: Silicon Storage Technology, Inc.
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: DLA Piper LLP (US)
- 主分类号: H01L25/00
- IPC分类号: H01L25/00
摘要:
A novel capacitor for use in a charge pump circuit has a substrate with a planar surface. A first electrode is in a first plane spaced apart from the planar surface. A second electrode is adjacent to and is spaced apart from the first electrode in the first plane and is capacitively coupled thereto. A third electrode is in a second plane, spaced apart from the first plane and is capacitively coupled to the first electrode. A fourth electrode is adjacent to and spaced apart from the third electrode in the second plane and is capacitively coupled to the third electrode and capacitively coupled to the second electrode. The first and fourth electrodes are electrically connected together and the second and third electrodes are electrically connected together. In addition, a cylindrical shape electrode, and a great wall electrode, and charge pump capacitor-by-pattern-filling is disclosed. A charge pump circuit using the foregoing described capacitor has a plurality of transistors for charging the capacitor and discharging the capacitor thereby increasing the voltage of the charge pump circuit.