发明授权
- 专利标题： Method and apparatus for forming a high quality low temperature silicon nitride layer
- 专利标题（中）： 用于形成高质量低温氮化硅层的方法和装置
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申请号： US10741417申请日： 2003-12-19
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公开(公告)号： US07972663B2公开(公告)日： 2011-07-05
- 发明人: Shulin Wang , Errol Antonio C. Sanchez , Aihua (Steven) Chen
- 申请人： Shulin Wang , Errol Antonio C. Sanchez , Aihua (Steven) Chen
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, L.L.P.
- 主分类号： H05H1/24
- IPC分类号： H05H1/24 ; H05H1/00 ; B05D3/00 ; C04B41/00 ; C08J7/18 ; C23C16/00
摘要：
A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.
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