发明授权
- 专利标题： Memory device manufacturing method
- 专利标题（中）： 存储器件制造方法
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申请号： US12469184申请日： 2009-05-20
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公开(公告)号： US07972893B2公开(公告)日： 2011-07-05
- 发明人: Erh-Kun Lai , ChiaHua Ho , Kuang-Yeu Hsieh
- 申请人： Erh-Kun Lai , ChiaHua Ho , Kuang-Yeu Hsieh
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Haynes Beffel & Wolfeld LLP
- 代理商 James F. Hann
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for making a memory device includes providing a dielectric material, having first and second upwardly and inwardly tapering surfaces and a surface segment connecting the first and second surfaces. First and second electrodes are formed over the first and second surfaces. A memory element is formed over the surface segment to electrically connect the first and second electrodes.
公开/授权文献
- US20090239358A1 Memory Device Manufacturing Method 公开/授权日：2009-09-24
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