Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12117630Application Date: 2008-05-08
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Publication No.: US07973314B2Publication Date: 2011-07-05
- Inventor: Seung-Jin Yang , Jeong-Uk Han , Yong-Tae Kim , Yong-Suk Choi , Hyok-Ki Kwon
- Applicant: Seung-Jin Yang , Jeong-Uk Han , Yong-Tae Kim , Yong-Suk Choi , Hyok-Ki Kwon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0046615 20070514
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L31/036 ; H01L31/112

Abstract:
A semiconductor device has a first semiconductor layer including a first circuit, a second semiconductor layer disposed on the first semiconductor layer and having a second circuit, and a via extending through portions of the first and second semiconductor layers and by which the first and second circuits are electrically connected. One of the circuits is a logic circuit and the other of the circuits is a memory circuit. The semiconductor device is manufactured by fabricating transistors of the logic and memory circuits on respective substrates, stacking the substrates, and electrically connecting the logic and memory circuits with a via.
Public/Granted literature
- US20080283873A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-11-20
Information query
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