发明授权
- 专利标题： Phase change memory cell including multiple phase change material portions
- 专利标题（中）： 相变存储单元包括多个相变材料部分
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申请号： US11265377申请日： 2005-11-02
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公开(公告)号： US07973384B2公开(公告)日： 2011-07-05
- 发明人: Thomas Happ , Jan Boris Philipp
- 申请人： Thomas Happ , Jan Boris Philipp
- 申请人地址： DE Munich
- 专利权人： Qimonda AG
- 当前专利权人： Qimonda AG
- 当前专利权人地址： DE Munich
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A memory cell includes a first electrode, a second electrode, and a first portion of phase-change material contacting the first electrode. The memory cell includes a second portion of phase-change material contacting the second electrode and a third portion of phase-change material between the first portion and the second portion. A phase-change material composition of the third portion and the second portion gradually transitions from the third portion to the second portion.
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