发明授权
- 专利标题： Semiconductor structures including square cuts in single crystal silicon
- 专利标题（中）： 包括单晶硅方形切割的半导体结构
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申请号： US12565557申请日： 2009-09-23
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公开(公告)号： US07973388B2公开(公告)日： 2011-07-05
- 发明人: Whonchee Lee , Janos Fucsko , David H. Wells
- 申请人： Whonchee Lee , Janos Fucsko , David H. Wells
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.
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