发明授权
- 专利标题： Manufacturing process and structure of through silicon via
- 专利标题（中）： 通过硅通孔的制造工艺和结构
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申请号： US12133828申请日： 2008-06-05
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公开(公告)号： US07973415B2公开(公告)日： 2011-07-05
- 发明人: Michihiro Kawashita , Yasuhiro Yoshimura , Naotaka Tanaka , Takahiro Naito , Takashi Akazawa
- 申请人： Michihiro Kawashita , Yasuhiro Yoshimura , Naotaka Tanaka , Takahiro Naito , Takashi Akazawa
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Mattingly & Malur, PC
- 优先权： JP2007-150289 20070606
- 主分类号： H01L29/41
- IPC分类号： H01L29/41
摘要：
A through silicon via reaching a pad from a second surface of a semiconductor substrate is formed. A penetration space in the through silicon via is formed of a first hole and a second hole with a diameter smaller than that of the first hole. The first hole is formed from the second surface of the semiconductor substrate to the middle of the interlayer insulating film. Further, the second hole reaching the pad from the bottom of the first hole is formed. Then, the interlayer insulating film formed on the first surface of the semiconductor substrate has a step shape reflecting a step difference between the bottom surface of the first hole and the first surface of the semiconductor substrate. More specifically, the thickness of the interlayer insulating film between the bottom surface of the first hole and the pad is smaller than that in other portions.
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