Invention Grant
- Patent Title: Prevention of quantum dot quenching on metal surfaces
- Patent Title (中): 防止金属表面上的量子点淬火
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Application No.: US11740213Application Date: 2007-04-25
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Publication No.: US07976726B2Publication Date: 2011-07-12
- Inventor: Cheng-I Wang , Haixia Dai , Manfred Heidecker
- Applicant: Cheng-I Wang , Haixia Dai , Manfred Heidecker
- Applicant Address: US CA San Francisco
- Assignee: Siluria Technologies, Inc.
- Current Assignee: Siluria Technologies, Inc.
- Current Assignee Address: US CA San Francisco
- Agency: Seed IP Law Group PLLC
- Main IPC: C09K11/08
- IPC: C09K11/08 ; C09K11/02
Abstract:
A formulation comprises quantum dots and a quenching-preventive agent in a carrier material. The quenching-preventive agent is a metal chelating agents, a corrosion inhibitor, or a combination thereof. The formulation can be applied to a metal substrate, without experiencing metal ion induced fluorescence quenching.
Public/Granted literature
- US20080050513A1 PREVENTION OF QUANTUM DOT QUENCHING ON METAL SURFACES Public/Granted day:2008-02-28
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