METHOD OF PRODUCING NITRIDE FLUORESCENT MATERIAL AND NITRIDE FLUORESCENT MATERIAL

    公开(公告)号:US20240209256A1

    公开(公告)日:2024-06-27

    申请号:US18394693

    申请日:2023-12-22

    IPC分类号: C09K11/08 C09K11/77

    CPC分类号: C09K11/0883 C09K11/77347

    摘要: A method of producing a nitride fluorescent material includes preparing a calcined product including a fluorescent material core, and a first film containing fluoride on a surface of the fluorescent material core, bringing the calcined product into contact with a solution containing a metal alkoxide containing an element M2 being at least one element selected from the group consisting of Si, Al, Ti, Zr, Sn, and Zn at a temperature equal to or lower than an ambient temperature and hydrolyzing and condensation-polymerizing the metal alkoxide to form a second film containing an oxide containing the element M2, and performing a heat-treatment at a temperature higher than 250° C. and equal to or lower than 500° C. The nitride fluorescent material includes the fluorescent material core having a composition containing an element Ma being at least one element selected from the group consisting of Sr, Ca, Ba, and Mg, an element Mb being at least one element selected from the group consisting of Li, Na, and K, an element Mc being at least one element selected from the group consisting of Eu, Ce, Tb, and Mn, Al, N, and optionally Si.

    Quantum dots, and an electronic device including the same

    公开(公告)号:US11981850B2

    公开(公告)日:2024-05-14

    申请号:US17991903

    申请日:2022-11-22

    摘要: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

    Infrared radiation-emitting resin composition

    公开(公告)号:US11981847B2

    公开(公告)日:2024-05-14

    申请号:US18115291

    申请日:2023-02-28

    申请人: Firbest CO., Ltd.

    发明人: Shunichi Kikuta

    IPC分类号: C09K11/08 C09K11/02 C09K11/65

    摘要: An infrared radiation-emitting resin composition includes an infrared radiation-emitting material and a resin. The infrared radiation-emitting material includes a titanium dioxide, a calcined hydrotalcite-like compound, and a nano-sized diamond. In the infrared radiation-emitting material, the mass ratio between the titanium dioxide and the calcined hydrotalcite-like compound is 60:40 to 90:10, while the content of the nano-sized diamond is 0.01 parts by mass or more and 0.5 parts by mass or less with respect to 100 parts by mass of the sum of the titanium dioxide and the calcined hydrotalcite-like compound.