Invention Grant
US07977177B2 Methods of forming nano-devices using nanostructures having self-assembly characteristics
有权
使用具有自组装特性的纳米结构形成纳米器件的方法
- Patent Title: Methods of forming nano-devices using nanostructures having self-assembly characteristics
- Patent Title (中): 使用具有自组装特性的纳米结构形成纳米器件的方法
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Application No.: US12330898Application Date: 2008-12-09
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Publication No.: US07977177B2Publication Date: 2011-07-12
- Inventor: Yonghan Roh , Kyoungseob Kim , Seokwon Jeong , Hyungjin Kim , Sungha Park
- Applicant: Yonghan Roh , Kyoungseob Kim , Seokwon Jeong , Hyungjin Kim , Sungha Park
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Sungkyunkwan University Foundation for Corporate Collaboration
- Current Assignee: Sungkyunkwan University Foundation for Corporate Collaboration
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: KR10-2008-0098992 20081009
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Provided are methods of forming nano-devices. One of the methods includes forming a nano-scale self-assembly material layer on a substrate formed of at least one layer, forming a mask layer on the self-assembly material layer, performing a surface treatment process on the substrate using the mask layer as a mask, and removing the self-assembly material layer. Accordingly, it is possible to fabricate nano-devices through a nano-scale substrate patterning process, ion implantation process and etching process, without using a light source.
Public/Granted literature
- US20100093160A1 METHODS OF FORMING NANO-DEVICES USING NANOSTRUCTURES HAVING SELF-ASSEMBLY CHARACTERISTICS Public/Granted day:2010-04-15
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