公开(公告)号：US20160027637A1

公开(公告)日：2016-01-28

申请号：US14704912

申请日：2015-05-05

申请人： KYOUNGSEOB KIM ,  YONGSUN KO ,  KYOUNG HWAN KIM ,  SeokHoon KIM ,  KUNTACK LEE ,  HYOSAN LEE

发明人： KYOUNGSEOB KIM ,  YONGSUN KO ,  KYOUNG HWAN KIM ,  SeokHoon KIM ,  KUNTACK LEE ,  HYOSAN LEE

IPC分类号： H01L21/02 ,  H01L21/56 ,  H01L21/67 ,  H01L21/78

CPC分类号： H01L21/02068 ,  H01L21/67051 ,  H01L21/78

摘要： A method of manufacturing a semiconductor device includes: forming a pattern on a surface of a semiconductor substrate; placing the substrate on a platform of a substrate treatment apparatus; rotating the wafer while applying a cleaning liquid from a first nozzle and a wetting liquid from a second nozzle to treat a first region on the surface of the substrate; vertically changing the distance of the second nozzle together with the first nozzle with respect to the platform; after the vertical change, rotating the wafer while applying the cleaning liquid from the first nozzle and the wetting liquid from the second nozzle to treat a second region on the surface of the substrate; and forming a semiconductor device from the treated substrate.

摘要翻译： 一种制造半导体器件的方法包括：在半导体衬底的表面上形成图案; 将基板放置在基板处理装置的平台上; 在从第一喷嘴施加清洁液体和来自第二喷嘴的润湿液体的同时旋转晶片以处理基板表面上的第一区域; 与第一喷嘴相对于平台垂直地改变第二喷嘴的距离; 在垂直变化之后，在从第一喷嘴施加清洁液体和来自第二喷嘴的润湿液体的同时转动晶片以处理基板表面上的第二区域; 以及从处理过的衬底形成半导体器件。

公开(公告)号：US20150368557A1

公开(公告)日：2015-12-24

申请号：US14312043

申请日：2014-06-23

申请人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kuntack Lee ,  Jihoon Jeong ,  Chen Lin ,  Christopher K. Ober

发明人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kuntack Lee ,  Jihoon Jeong ,  Chen Lin ,  Christopher K. Ober

IPC分类号： C09K13/00

CPC分类号： C09K13/08 ,  C23F1/18 ,  C23F1/20 ,  C23F1/26 ,  H01L21/02063 ,  H01L21/0273 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/6708 ,  H01L21/76802 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/03614 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104

摘要： The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

摘要翻译： 本发明构思提供金属蚀刻剂组合物和使用其制造半导体器件的方法。 金属蚀刻剂组合物包括约0.1重量％至约20重量％范围内的有机过氧化物，约0.1重量％至约70重量％范围内的有机酸和约0.001重量％至约70重量％范围内的醇系溶剂 10重量％至约99.8重量％。 金属蚀刻剂组合物可用于无水体系中。

公开(公告)号：US09027576B2

公开(公告)日：2015-05-12

申请号：US13844149

申请日：2013-03-15

申请人： Yong-Jhin Cho ,  Yongsun Ko ,  Kyoungseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Wonho Jang ,  Yongmyung Jun

发明人： Yong-Jhin Cho ,  Yongsun Ko ,  Kyoungseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Wonho Jang ,  Yongmyung Jun

IPC分类号： H01L21/67

CPC分类号： H01L21/67017 ,  H01L21/67051 ,  H01L21/6708

摘要： Substrate treatment systems are provided. The substrate treatment systems may include a treating device configured to treat a substrate with a supercritical fluid, and a supplying device configured to supply the supercritical fluid to the treating device. The treating device may include a supercritical process zone in which the substrate is treated with the supercritical fluid, and a pre-supercritical process zone in which the supercritical fluid is expanded and then provided into the supercritical process zone to create a supercritical state in the supercritical process zone.

摘要翻译： 提供底物处理系统。 衬底处理系统可以包括被配置为用超临界流体处理衬底的处理装置和被配置为将超临界流体供应到处理装置的供给装置。 处理装置可以包括其中用超临界流体处理衬底的超临界过程区，以及超临界过程区，其中超临界流体被膨胀，然后被提供到超临界过程区以在超临界流体中产生超临界状态 过程区。

公开(公告)号：US07977177B2

公开(公告)日：2011-07-12

申请号：US12330898

申请日：2008-12-09

申请人： Yonghan Roh ,  Kyoungseob Kim ,  Seokwon Jeong ,  Hyungjin Kim ,  Sungha Park

发明人： Yonghan Roh ,  Kyoungseob Kim ,  Seokwon Jeong ,  Hyungjin Kim ,  Sungha Park

IPC分类号： H01L21/336

CPC分类号： H01L21/32139 ,  B81C1/00396 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  H01L21/0332 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78

摘要： Provided are methods of forming nano-devices. One of the methods includes forming a nano-scale self-assembly material layer on a substrate formed of at least one layer, forming a mask layer on the self-assembly material layer, performing a surface treatment process on the substrate using the mask layer as a mask, and removing the self-assembly material layer. Accordingly, it is possible to fabricate nano-devices through a nano-scale substrate patterning process, ion implantation process and etching process, without using a light source.

摘要翻译： 提供了形成纳米器件的方法。 其中一种方法包括在由至少一层形成的衬底上形成纳米级自组装材料层，在自组装材料层上形成掩模层，使用掩模层在衬底上进行表面处理工艺 掩模，并且去除自组装材料层。 因此，可以通过纳米级基板图案化工艺，离子注入工艺和蚀刻工艺制造纳米器件，而不使用光源。

公开(公告)号：US20100093160A1

公开(公告)日：2010-04-15

申请号：US12330898

申请日：2008-12-09

申请人： Yonghan Roh ,  Kyoungseob Kim ,  Seokwon Jeong ,  Hyungjin Kim ,  Sungha Park

发明人： Yonghan Roh ,  Kyoungseob Kim ,  Seokwon Jeong ,  Hyungjin Kim ,  Sungha Park

IPC分类号： H01L21/266 ,  H01L21/311

CPC分类号： H01L21/32139 ,  B81C1/00396 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  H01L21/0332 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78

摘要： Provided are methods of forming nano-devices. One of the methods includes forming a nano-scale self-assembly material layer on a substrate formed of at least one layer, forming a mask layer on the self-assembly material layer, performing a surface treatment process on the substrate using the mask layer as a mask, and removing the self-assembly material layer.Accordingly, it is possible to fabricate nano-devices through a nano-scale substrate patterning process, ion implantation process and etching process, without using a light source.

摘要翻译： 提供了形成纳米器件的方法。 其中一种方法包括在由至少一层形成的衬底上形成纳米级自组装材料层，在自组装材料层上形成掩模层，使用掩模层在衬底上进行表面处理工艺 掩模，并且去除自组装材料层。 因此，可以通过纳米级基板图案化工艺，离子注入工艺和蚀刻工艺制造纳米器件，而不使用光源。

公开(公告)号：US10155903B2

公开(公告)日：2018-12-18

申请号：US15075709

申请日：2016-03-21

申请人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kuntack Lee ,  Jihoon Jeong ,  Chen Lin ,  Christopher K. Ober

发明人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kuntack Lee ,  Jihoon Jeong ,  Chen Lin ,  Christopher K. Ober

IPC分类号： B44C1/22 ,  C23F1/00 ,  C03C15/00 ,  C03C25/68 ,  C25F3/00 ,  C09K13/08 ,  H01L21/027 ,  H01L21/311 ,  H01L21/768 ,  H01L23/00 ,  C23F1/26 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/67 ,  C23F1/18 ,  C23F1/20

摘要： The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

公开(公告)号：US20160204001A1

公开(公告)日：2016-07-14

申请号：US15075709

申请日：2016-03-21

申请人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kuntack Lee ,  Jihoon Jeong ,  Chen Lin ,  Christopher K. Ober

发明人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kuntack Lee ,  Jihoon Jeong ,  Chen Lin ,  Christopher K. Ober

IPC分类号： H01L21/3213 ,  H01L23/00 ,  H01L21/027 ,  H01L21/768 ,  H01L21/311

CPC分类号： C09K13/08 ,  C23F1/18 ,  C23F1/20 ,  C23F1/26 ,  H01L21/02063 ,  H01L21/0273 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/6708 ,  H01L21/76802 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/03614 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104

摘要： The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

公开(公告)号：US20150343495A1

公开(公告)日：2015-12-03

申请号：US14682349

申请日：2015-04-09

申请人： Kyoungseob KIM ,  Yongsun KO ,  SeokHoon KIM ,  Kuntack LEE ,  Hyosan LEE ,  Gilheyun CHOI

发明人： Kyoungseob KIM ,  Yongsun KO ,  SeokHoon KIM ,  Kuntack LEE ,  Hyosan LEE ,  Gilheyun CHOI

IPC分类号： B08B3/02 ,  H01L21/67

CPC分类号： H01L21/67051 ,  B08B3/024

摘要： An apparatus for treating a substrate includes a spin chuck supporting a substrate, a nozzle movably disposed on the spin chuck, the nozzle providing droplets of a treatment liquid onto a surface of the substrate, and a nozzle arm moving the nozzle above the spin chuck, wherein the nozzle arm moves the nozzle horizontally along the surface of the substrate, and vertically with respect to the surface of the substrate, wherein the nozzle arm moves the nozzle between an edge of the substrate and a center of the substrate, the nozzle moving away from the surface of the substrate while approaching toward the center of the substrate, and wherein droplets provided onto the center of the substrate have a smaller vertical spacing than that of droplets provided onto the edge of the substrate.

摘要翻译： 一种用于处理基板的设备包括支撑基板的旋转卡盘，可移动地设置在旋转卡盘上的喷嘴，喷嘴将处理液体的液滴提供到基板的表面上，喷嘴臂使喷嘴移动到旋转卡盘上方， 其中所述喷嘴臂沿着所述基板的表面水平地移动所述喷嘴，并相对于所述基板的表面垂直移动，其中所述喷嘴臂使所述喷嘴在所述基板的边缘和所述基板的中心之间移动，所述喷嘴移开 从衬底的表面接近朝向衬底的中心，并且其中设置在衬底的中心上的液滴具有比设置在衬底的边缘上的液滴更小的垂直间隔。

公开(公告)号：US20140262024A1

公开(公告)日：2014-09-18

申请号：US13844149

申请日：2013-03-15

申请人： Yong-Jhin CHO ,  YONGSUN KO ,  KYOUNGSEOB KIM ,  KWANGSU KIM ,  SeokHoon KIM ,  Jung-Min OH ,  KUNTACK LEE ,  WONHO JANG ,  YONGMYUNG JUN

发明人： Yong-Jhin CHO ,  YONGSUN KO ,  KYOUNGSEOB KIM ,  KWANGSU KIM ,  SeokHoon KIM ,  Jung-Min OH ,  KUNTACK LEE ,  WONHO JANG ,  YONGMYUNG JUN

IPC分类号： H01L21/67

CPC分类号： H01L21/67017 ,  H01L21/67051 ,  H01L21/6708

摘要： Substrate treatment systems are provided. The substrate treatment systems may include a treating device configured to treat a substrate with a supercritical fluid, and a supplying device configured to supply the supercritical fluid to the treating device. The treating device may include a supercritical process zone in which the substrate is treated with the supercritical fluid, and a pre-supercritical process zone in which the supercritical fluid is expanded and then provided into the supercritical process zone to create a supercritical state in the supercritical process zone.

摘要翻译： 提供底物处理系统。 衬底处理系统可以包括被配置为用超临界流体处理衬底的处理装置和被配置为将超临界流体供应到处理装置的供给装置。 处理装置可以包括其中用超临界流体处理衬底的超临界过程区，以及超临界过程区，其中超临界流体被膨胀，然后被提供到超临界过程区以在超临界流体中产生超临界状态 过程区。