发明授权
US07977793B2 Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the same
有权
具有无定形TaBN层的扩散阻挡层的半导体器件的金属线及其形成方法
- 专利标题： Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the same
- 专利标题（中）： 具有无定形TaBN层的扩散阻挡层的半导体器件的金属线及其形成方法
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申请号： US11939666申请日： 2007-11-14
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公开(公告)号： US07977793B2公开(公告)日： 2011-07-12
- 发明人: Dong Ha Jung , Seung Jin Yeom , Baek Mann Kim , Young Jin Lee , Jeong Tae Kim
- 申请人： Dong Ha Jung , Seung Jin Yeom , Baek Mann Kim , Young Jin Lee , Jeong Tae Kim
- 申请人地址： KR Kyoungki-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyoungki-do
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2007-0065412 20070629
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.
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