公开(公告)号：US07977793B2

公开(公告)日：2011-07-12

申请号：US11939666

申请日：2007-11-14

申请人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

发明人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.

摘要翻译： 半导体器件中的金属线包括形成在半导体衬底上的绝缘层。 在绝缘层中形成金属线形成区域。 形成金属线以填充绝缘层的金属线形成区域。 并且在金属线和绝缘层之间形成包括非晶态TaBN层的扩散阻挡层。 无定形TaBN层防止铜成分扩散到半导体衬底中，从而改善器件的特性和可靠性。

公开(公告)号：US07875979B2

公开(公告)日：2011-01-25

申请号：US12619147

申请日：2009-11-16

申请人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

发明人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

IPC分类号： H01L29/40

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line of a semiconductor device having a diffusion barrier including CrxBy and a method for forming the same is described. The metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer is formed having a metal line forming region. A diffusion barrier including a CrxBy layer is subsequently formed on the surface of the metal line forming region and the insulation layer. A metal line is finally formed to fill the metal line forming region of the insulation layer on the diffusion barrier including a CrxBy layer.

摘要翻译： 描述了具有包括CrxBy的扩散阻挡层的半导体器件的金属线及其形成方法。 半导体器件的金属线包括形成在半导体衬底上的绝缘层。 绝缘层形成有金属线形成区域。 随后在金属线形成区域和绝缘层的表面上形成包括Cr x B y层的扩散阻挡层。 最后形成金属线以填充包含CrxBy层的扩散阻挡层上的绝缘层的金属线形成区域。

公开(公告)号：US07638425B2

公开(公告)日：2009-12-29

申请号：US11940370

申请日：2007-11-15

申请人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

发明人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line of a semiconductor device having a diffusion barrier including CrxBy and a method for forming the same is described. The metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer is formed having a metal line forming region. A diffusion barrier including a CrxBy layer is subsequently formed on the surface of the metal line forming region and the insulation layer. A metal line is finally formed to fill the metal line forming region of the insulation layer on the diffusion barrier including a CrxBy layer.

摘要翻译： 描述了具有包括CrxBy的扩散阻挡层的半导体器件的金属线及其形成方法。 半导体器件的金属线包括形成在半导体衬底上的绝缘层。 绝缘层形成有金属线形成区域。 随后在金属线形成区域和绝缘层的表面上形成包括Cr x B y层的扩散阻挡层。 最后形成金属线以填充包含CrxBy层的扩散阻挡层上的绝缘层的金属线形成区域。

公开(公告)号：US08338951B2

公开(公告)日：2012-12-25

申请号：US13152665

申请日：2011-06-03

申请人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

发明人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.

摘要翻译： 半导体器件中的金属线包括形成在半导体衬底上的绝缘层。 在绝缘层中形成金属线形成区域。 形成金属线以填充绝缘层的金属线形成区域。 并且在金属线和绝缘层之间形成包括非晶态TaBN层的扩散阻挡层。 无定形TaBN层防止铜成分扩散到半导体衬底中，从而改善器件的特性和可靠性。

公开(公告)号：US07902065B2

公开(公告)日：2011-03-08

申请号：US11939798

申请日：2007-11-14

申请人： Baek Mann Kim ,  Seung Jin Yeom ,  Young Jin Lee ,  Dong Ha Jung ,  Jeong Tae Kim

发明人： Baek Mann Kim ,  Seung Jin Yeom ,  Young Jin Lee ,  Dong Ha Jung ,  Jeong Tae Kim

IPC分类号： H01L21/00

CPC分类号： H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multi-layered metal line of a semiconductor device and a process of forming the same are described. The multi-layered metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is subsequently formed on the semiconductor substrate including the lower metal line and has an upper metal line forming region that exposes a portion of the lower metal line. A diffusion barrier formed on a surface of the upper metal line forming region of the insulation layer. The diffusion barrier includes a W—B—N ternary layer. An upper metal line is finally formed on the diffusion barrier to fill the upper metal line forming region of the insulation layer.

摘要翻译： 描述半导体器件的多层金属线及其形成方法。 多层金属线包括形成在半导体衬底上的下金属线。 随后在包括下金属线的半导体衬底上形成绝缘层，并且具有暴露下部金属线的一部分的上部金属线形成区域。 形成在绝缘层的上部金属线形成区域的表面上的扩散阻挡层。 扩散阻挡层包括W-B-N三元层。 在扩散阻挡层上最终形成上金属线以填充绝缘层的上金属线形成区域。

公开(公告)号：US07855456B2

公开(公告)日：2010-12-21

申请号：US12328988

申请日：2008-12-05

申请人： Baek Mann Kim ,  Seung Jin Yeom ,  Dong Ha Jung ,  Jeong Tae Kim

发明人： Baek Mann Kim ,  Seung Jin Yeom ,  Dong Ha Jung ,  Jeong Tae Kim

IPC分类号： H01L23/48

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76856

摘要： A metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is formed on the semiconductor substrate having the lower metal line, and a metal line forming region exposing at least a portion of the lower metal line is defined in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and includes a WNx layer, a W—N—B ternary layer, and a Ti—N—B ternary layer. A wetting layer is formed on the diffusion barrier and is made of one of a Ti layer or a TiN layer. An upper metal line is formed on the wetting layer to fill the metal line forming region of the insulation layer.

摘要翻译： 金属线包括形成在半导体衬底上的下金属线。 在具有下金属线的半导体衬底上形成绝缘层，并且在绝缘层中限定暴露下金属线的至少一部分的金属线形成区域。 在绝缘层的金属线形成区域的表面上形成扩散阻挡层，其包括WNx层，W-N-B三元层和Ti-N-B三元层。 在扩散阻挡层上形成润湿层，由Ti层或TiN层之一构成。 在润湿层上形成上金属线以填充绝缘层的金属线形成区域。

公开(公告)号：US07777336B2

公开(公告)日：2010-08-17

申请号：US12329718

申请日：2008-12-08

申请人： Jeong Tae Kim ,  Seung Jin Yeom ,  Baek Mann Kim ,  Dong Ha Jung ,  Joon Seok Oh ,  Nam Yeal Lee ,  Jae Hong Kim

发明人： Jeong Tae Kim ,  Seung Jin Yeom ,  Baek Mann Kim ,  Dong Ha Jung ,  Joon Seok Oh ,  Nam Yeal Lee ,  Jae Hong Kim

IPC分类号： H01L21/48

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate and a metal line forming region is formed in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer, and the diffusion layer has a multi-layered structure of an Ru layer, an RuxOy layer, an IrxOy layer, and a Ti layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

摘要翻译： 半导体器件的金属线包括形成在半导体衬底上的绝缘层，并且在绝缘层中形成金属线形成区域。 在绝缘层的金属线形成区域的表面上形成扩散阻挡层，扩散层具有Ru层，RuxOy层，IrxOy层和Ti层的多层结构。 在扩散阻挡层上形成金属层以填充绝缘层的金属线形成区域。

公开(公告)号：US08159069B2

公开(公告)日：2012-04-17

申请号：US12940521

申请日：2010-11-05

申请人： Baek Mann Kim ,  Seung Jin Yeom ,  Dong Ha Jung ,  Jeong Tae Kim

发明人： Baek Mann Kim ,  Seung Jin Yeom ,  Dong Ha Jung ,  Jeong Tae Kim

IPC分类号： H01L23/48

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76856

摘要： A metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is formed on the semiconductor substrate having the lower metal line, and a metal line forming region exposing at least a portion of the lower metal line is defined in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and includes a WNx layer, a W—N—B ternary layer, and a Ti—N—B ternary layer. A wetting layer is formed on the diffusion barrier and is made of one of a Ti layer or a TiN layer. An upper metal line is formed on the wetting layer to fill the metal line forming region of the insulation layer.

摘要翻译： 金属线包括形成在半导体衬底上的下金属线。 在具有下金属线的半导体衬底上形成绝缘层，并且在绝缘层中限定暴露下金属线的至少一部分的金属线形成区域。 在绝缘层的金属线形成区域的表面上形成扩散阻挡层，其包括WNx层，W-N-B三元层和Ti-N-B三元层。 在扩散阻挡层上形成润湿层，由Ti层或TiN层之一构成。 在润湿层上形成上金属线以填充绝缘层的金属线形成区域。

公开(公告)号：US08278218B2

公开(公告)日：2012-10-02

申请号：US13241415

申请日：2011-09-23

申请人： Joon Seok Oh ,  Seung Jin Yeom ,  Baek Mann Kim ,  Dong Ha Jung ,  Jeong Tae Kim ,  Nam Yeal Lee ,  Jae Hong Kim

发明人： Joon Seok Oh ,  Seung Jin Yeom ,  Baek Mann Kim ,  Dong Ha Jung ,  Jeong Tae Kim ,  Nam Yeal Lee ,  Jae Hong Kim

IPC分类号： H01L21/44

CPC分类号： H01L21/76846 ,  H01L21/76856 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrical conductor having a multilayer diffusion barrier of use in a resultant semiconductor device is presented. The electrical conductor line includes an insulation layer, a diffusion barrier, and a metal line. The insulation layer is formed on a semiconductor substrate and having a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a multi-layered structure made of TaN layer, an MoxOy layer and an Mo layer. The metal line is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

摘要翻译： 本发明提供了一种在所得半导体器件中使用的具有多层扩散阻挡层的电导体。 电导体线包括绝缘层，扩散阻挡层和金属线。 绝缘层形成在半导体衬底上并具有金属线形成区域。 扩散阻挡层形成在绝缘层的金属线形成区域的表面上，具有由TaN层，MoxOy层和Mo层构成的多层结构。 金属线形成在扩散阻挡层上以填充绝缘层的金属线形成区域。

公开(公告)号：US07741216B2

公开(公告)日：2010-06-22

申请号：US12326374

申请日：2008-12-02

申请人： Jeong Tae Kim ,  Seung Jin Yeom ,  Baek Mann Kim ,  Dong Ha Jung

发明人： Jeong Tae Kim ,  Seung Jin Yeom ,  Baek Mann Kim ,  Dong Ha Jung

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/76807 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate and having a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier has a multi-layered structure of a V layer, a VxNy layer and a VxNyOz layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

摘要翻译： 半导体器件的金属线包括形成在半导体衬底上并具有金属线形成区域的绝缘层。 在绝缘层的金属线形成区域的表面上形成扩散阻挡层。 扩散势垒具有V层，VxNy层和VxNyOz层的多层结构。 在扩散阻挡层上形成金属层以填充绝缘层的金属线形成区域。