发明授权
- 专利标题： Nonvolatile semiconductor memory device and method for manufacturing same
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12563832申请日： 2009-09-21
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公开(公告)号： US07982261B2公开(公告)日： 2011-07-19
- 发明人: Masaru Kidoh , Hiroyasu Tanaka , Ryota Katsumata , Masaru Kito , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi , Yoshiaki Fukuzumi
- 申请人： Masaru Kidoh , Hiroyasu Tanaka , Ryota Katsumata , Masaru Kito , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi , Yoshiaki Fukuzumi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-284375 20081105
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A nonvolatile semiconductor memory device includes a first stacked body on a silicon substrate, and a second stacked body is provided thereon. The first stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films, and a first portion of a through-hole extending in a stacking direction is formed. The second stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films, and a second portion of the through-hole is formed. A memory film is formed on an inner face of the through-hole, and a silicon pillar is buried in an interior of the through-hole. A central axis of the second portion of the through-hole is shifted from a central axis of the first portion, and a lower end of the second portion is positioned lower than an upper portion of the first portion.
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