发明授权
- 专利标题: Nonvolatile memory device
- 专利标题(中): 非易失性存储器件
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申请号: US12830954申请日: 2010-07-06
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公开(公告)号: US07983075B2公开(公告)日: 2011-07-19
- 发明人: Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa , Masakazu Taki
- 申请人: Takashi Takenaga , Takeharu Kuroiwa , Taisuke Furukawa , Masakazu Taki
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2005-345462 20051130
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force.
公开/授权文献
- US20100270633A1 NONVOLATILE MEMORY DEVICE 公开/授权日:2010-10-28
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