发明授权
- 专利标题: Structures incorporating semiconductor device structures with reduced junction capacitance and drain induced barrier lowering
- 专利标题(中): 结合了具有减小的结电容和漏极引起的屏障降低的半导体器件结构
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申请号: US11875013申请日: 2007-10-19
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公开(公告)号: US07984408B2公开(公告)日: 2011-07-19
- 发明人: Kangguo Cheng , Louis Lu-Chen Hsu , Jack Allan Mandelman , Haining Yang
- 申请人: Kangguo Cheng , Louis Lu-Chen Hsu , Jack Allan Mandelman , Haining Yang
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Wood, Herron & Evans, LLP
- 主分类号: G06F17/50
- IPC分类号: G06F17/50 ; H01L29/76
摘要:
Design structure embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes semiconductor device structures characterized by reduced junction capacitance and drain induced barrier lowering. The semiconductor device structure of the design structure includes a semiconductor layer and a dielectric layer disposed between the semiconductor layer and the substrate. The dielectric layer includes a first dielectric region with a first dielectric constant and a second dielectric region with a second dielectric constant that is greater than the first dielectric constant.
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