发明授权
- 专利标题: Structures incorporating interconnect structures with improved electromigration resistance
- 专利标题(中): 结合了具有改进的电迁移阻力的互连结构
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申请号: US11875193申请日: 2007-10-19
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公开(公告)号: US07984409B2公开(公告)日: 2011-07-19
- 发明人: Louis Lu-Chen Hsu , Jack Allan Mandelman , William Robert Tonti , Chih-Chao Yang
- 申请人: Louis Lu-Chen Hsu , Jack Allan Mandelman , William Robert Tonti , Chih-Chao Yang
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Wood, Herron & Evans, LLP
- 主分类号: G06F17/50
- IPC分类号: G06F17/50 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要:
Design structure embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure comprises an insulating layer of a dielectric material, an opening having sidewalls extending from a top surface of the insulating layer toward a bottom surface of the insulating layer, and a conductive feature disposed in the opening. The design structure includes a top capping layer disposed on at least a top surface of the conductive feature and a conductive liner layer disposed between the insulating layer and the conductive feature along at least the sidewalls of the opening. The conductive liner layer of the design structure has sidewall portions that project above the top surface of the insulating layer adjacent to the sidewalls of the opening.
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