Invention Grant
- Patent Title: Adaptive bias technique for field effect transistor
- Patent Title (中): 场效应晶体管的自适应偏置技术
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Application No.: US12518724Application Date: 2007-12-13
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Publication No.: US07986186B2Publication Date: 2011-07-26
- Inventor: Marvin Nii Nartey Marbell , James Cheng-Min Hwang
- Applicant: Marvin Nii Nartey Marbell , James Cheng-Min Hwang
- Applicant Address: US PA Bethlehem
- Assignee: Lehigh University
- Current Assignee: Lehigh University
- Current Assignee Address: US PA Bethlehem
- Agency: Duane Morris LLP
- International Application: PCT/US2007/087421 WO 20071213
- International Announcement: WO2008/076822 WO 20080626
- Main IPC: H03F3/20
- IPC: H03F3/20
Abstract:
A power amplifier includes a LDMOS transistor having a source, a drain, a control gate and a shielding electrode positioned between the control gate and the drain, and means for adaptively biasing the drain and shielding electrode power information for a RF signal.
Public/Granted literature
- US20100085120A1 ADAPTIVE BIAS TECHNIQUE FOR FIELD EFFECT TRANSISTOR Public/Granted day:2010-04-08
Information query
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