公开(公告)号：US20100085120A1

公开(公告)日：2010-04-08

申请号：US12518724

申请日：2007-12-13

Applicant: Marvin Nii Nartey Marbell ,  James Cheng-Min Hwang

Inventor： Marvin Nii Nartey Marbell ,  James Cheng-Min Hwang

IPC: H03F3/16

CPC classification number: H03F1/0222 ,  H03F1/0266

Abstract: A power amplifier includes a LDMOS transistor having a source, a drain, a control gate and a shielding electrode positioned between the control gate and the drain, and means for adaptively biasing the drain and shielding electrode power information for a RF signal.

Abstract translation: 功率放大器包括具有源极，漏极，控制栅极和位于控制栅极和漏极之间的屏蔽电极的LDMOS晶体管，以及用于自适应偏置RF信号的漏极和屏蔽电极功率信息的装置。

公开(公告)号：US07986186B2

公开(公告)日：2011-07-26

申请号：US12518724

申请日：2007-12-13

Applicant: Marvin Nii Nartey Marbell ,  James Cheng-Min Hwang

Inventor： Marvin Nii Nartey Marbell ,  James Cheng-Min Hwang

IPC: H03F3/20

CPC classification number: H03F1/0222 ,  H03F1/0266

Abstract: A power amplifier includes a LDMOS transistor having a source, a drain, a control gate and a shielding electrode positioned between the control gate and the drain, and means for adaptively biasing the drain and shielding electrode power information for a RF signal.

Abstract translation: 功率放大器包括具有源极，漏极，控制栅极和位于控制栅极和漏极之间的屏蔽电极的LDMOS晶体管，以及用于自适应偏置RF信号的漏极和屏蔽电极功率信息的装置。