A method for forming a fine pattern of a semiconductor device comprises forming a spin-on-carbon layer over an underlying layer, forming an anti-reflection pattern including a silicon containing polymer with a first etching mask pattern, forming a photoresist pattern including a silicon containing polymer with a second etching mask pattern between elements of the first etching mask pattern, and etching the spin-on-carbon layer with the etching mask patterns to reduce the process steps and the manufacturing cost, thereby obtaining a uniform pattern profile.