发明授权
- 专利标题: Method of making integrated circuit chip utilizing oriented carbon nanotube conductive layers
- 专利标题(中): 利用定向碳纳米管导电层制造集成电路芯片的方法
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申请号: US12830510申请日: 2010-07-06
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公开(公告)号: US07989222B2公开(公告)日: 2011-08-02
- 发明人: Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III , Peter H. Mitchell
- 申请人: Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III , Peter H. Mitchell
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Roy W. Truelson
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A conductive layer in an integrated circuit is formed as a sandwich having multiple sublayers, including at least two sublayers of oriented carbon nanotubes. A first sublayer is created by growing carbon nanotubes in a first direction parallel to the chip substrate from a catalyst in the presence of a reactant gas flow in the first direction, and a second sublayer is created by growing carbon nanotubes in a second direction parallel to the substrate and different from the first direction from a catalyst in the presence of a reactant gas flow in the second direction. The first and second directions are preferably substantially perpendicular. The conductive layer sandwich preferably contains one or more additional sublayers of a conductive material, such as a metal.
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