发明授权
US07989361B2 Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof
有权
电介质薄膜的组成，使用其的金属氧化物电介质薄膜及其制备方法
- 专利标题： Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof
- 专利标题（中）： 电介质薄膜的组成，使用其的金属氧化物电介质薄膜及其制备方法
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申请号： US11831380申请日： 2007-07-31
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公开(公告)号： US07989361B2公开(公告)日： 2011-08-02
- 发明人: Jong Baek Seon , Hyun Dam Jeong , Sang Yoon Lee
- 申请人： Jong Baek Seon , Hyun Dam Jeong , Sang Yoon Lee
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Cantor Colburn LLP
- 优先权： KR10-2006-0096650 20060930; KR10-2007-0048233 20070517
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
This invention pertains to a composition for a dielectric thin film, which is capable of being subjected to a low-temperature process. Specifically, the invention is directed to a metal oxide dielectric thin film formed using the composition, a preparation method thereof, a transistor device comprising the dielectric thin film, and an electronic device comprising the transistor device. The electronic device to which the dielectric thin film has been applied exhibits excellent electrical properties, thereby satisfying both a low operating voltage and a high charge mobility.
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