Invention Grant
US07989361B2 Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof
有权
电介质薄膜的组成，使用其的金属氧化物电介质薄膜及其制备方法
- Patent Title: Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof
- Patent Title (中): 电介质薄膜的组成，使用其的金属氧化物电介质薄膜及其制备方法
-
Application No.: US11831380Application Date: 2007-07-31
-
Publication No.: US07989361B2Publication Date: 2011-08-02
- Inventor: Jong Baek Seon , Hyun Dam Jeong , Sang Yoon Lee
- Applicant: Jong Baek Seon , Hyun Dam Jeong , Sang Yoon Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2006-0096650 20060930; KR10-2007-0048233 20070517
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
This invention pertains to a composition for a dielectric thin film, which is capable of being subjected to a low-temperature process. Specifically, the invention is directed to a metal oxide dielectric thin film formed using the composition, a preparation method thereof, a transistor device comprising the dielectric thin film, and an electronic device comprising the transistor device. The electronic device to which the dielectric thin film has been applied exhibits excellent electrical properties, thereby satisfying both a low operating voltage and a high charge mobility.
Public/Granted literature
Information query
IPC分类:
