发明授权
- 专利标题： Diode structure and memory device including the same
- 专利标题（中）： 二极管结构和存储器件包括相同
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申请号： US12076311申请日： 2008-03-17
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公开(公告)号： US07989791B2公开(公告)日： 2011-08-02
- 发明人: Bo-soo Kang , Stefanovich Genrikh , Young-soo Park , Myoung-jae Lee , Seung-eon Ahn , Chang-bum Lee
- 申请人： Bo-soo Kang , Stefanovich Genrikh , Young-soo Park , Myoung-jae Lee , Seung-eon Ahn , Chang-bum Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2007-0082989 20070817
- 主分类号： H01L29/12
- IPC分类号： H01L29/12
摘要：
Provided are a diode structure and a memory device including the same. The diode structure includes: a first electrode; a p-type Cu oxide layer formed on the first electrode; an n-type InZn oxide layer formed on the p-type Cu oxide layer; and a second electrode formed on the n-type InZn oxide.
公开/授权文献
- US20090045429A1 Diode structure and memory device including the same 公开/授权日：2009-02-19