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公开(公告)号：US07989791B2
公开(公告)日：2011-08-02
申请号：US12076311
申请日：2008-03-17
申请人： Bo-soo Kang , Stefanovich Genrikh , Young-soo Park , Myoung-jae Lee , Seung-eon Ahn , Chang-bum Lee
发明人： Bo-soo Kang , Stefanovich Genrikh , Young-soo Park , Myoung-jae Lee , Seung-eon Ahn , Chang-bum Lee
IPC分类号： H01L29/12
CPC分类号： H01L29/242 , H01L27/1021 , H01L27/24 , H01L29/24 , H01L29/267 , H01L29/8618
摘要： Provided are a diode structure and a memory device including the same. The diode structure includes: a first electrode; a p-type Cu oxide layer formed on the first electrode; an n-type InZn oxide layer formed on the p-type Cu oxide layer; and a second electrode formed on the n-type InZn oxide.
摘要翻译： 提供二极管结构和包括该二极管结构的存储器件。 二极管结构包括：第一电极; 形成在所述第一电极上的p型Cu氧化物层; 形成在p型Cu氧化物层上的n型InZn氧化物层; 以及形成在n型InZn氧化物上的第二电极。
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公开(公告)号：US20090072246A1
公开(公告)日：2009-03-19
申请号：US12076308
申请日：2008-03-17
申请人： Stefanovich Genrikh , Bo-soo Kang , Young-soo Park , Xianyu Wenxu , Myoung-Jae Lee , Seung-eon Ahn , Chang-bum Lee
发明人： Stefanovich Genrikh , Bo-soo Kang , Young-soo Park , Xianyu Wenxu , Myoung-Jae Lee , Seung-eon Ahn , Chang-bum Lee
IPC分类号： H01L33/00
CPC分类号： H01L27/1021 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L29/24 , H01L29/242 , H01L29/267 , H01L29/8615 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： Provided are a diode and a memory device comprising the diode. The diode includes a p-type semiconductor layer and an n-type semiconductor layer, wherein at least one of the p-type semiconductor layer and the n-type semiconductor layer comprises a resistance changing material whose resistance is changed according to a voltage applied to the resistance changing material.
摘要翻译： 提供了二极管和包括二极管的存储器件。 二极管包括p型半导体层和n型半导体层，其中p型半导体层和n型半导体层中的至少一个包括电阻变化材料，其电阻根据施加到 电阻变化材料。
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公开(公告)号：US20090045429A1
公开(公告)日：2009-02-19
申请号：US12076311
申请日：2008-03-17
申请人： Bo-soo Kang , Stefanovich Genrikh , Young-soo Park , Myoung-jae Lee , Seung-eon Ahn , Chang-bum Lee
发明人： Bo-soo Kang , Stefanovich Genrikh , Young-soo Park , Myoung-jae Lee , Seung-eon Ahn , Chang-bum Lee
CPC分类号： H01L29/242 , H01L27/1021 , H01L27/24 , H01L29/24 , H01L29/267 , H01L29/8618
摘要： Provided are a diode structure and a memory device including the same. The diode structure includes: a first electrode; a p-type Cu oxide layer formed on the first electrode; an n-type InZn oxide layer formed on the p-type Cu oxide layer; and a second electrode formed on the n-type InZn oxide.
摘要翻译： 提供二极管结构和包括该二极管结构的存储器件。 二极管结构包括：第一电极; 形成在所述第一电极上的p型Cu氧化物层; 形成在p型Cu氧化物层上的n型InZn氧化物层; 以及形成在n型InZn氧化物上的第二电极。
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公开(公告)号：US08890228B2
公开(公告)日：2014-11-18
申请号：US12292596
申请日：2008-11-21
申请人： Myoung-jae Lee , Young-soo Park , Chang-bum Lee , Seung-eon Ahn , Ki-hwan Kim , Bo-soo Kang
发明人： Myoung-jae Lee , Young-soo Park , Chang-bum Lee , Seung-eon Ahn , Ki-hwan Kim , Bo-soo Kang
CPC分类号： H01L23/49833 , G11C5/02 , G11C5/04 , G11C5/063 , H01L23/481 , H01L25/18 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/06572 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes: a memory array on a first substrate; and a peripheral circuit on a second substrate, wherein the first substrate and the second substrate may be attached to each other so that the memory array and the peripheral circuit are electrically connected to each other.
摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括：第一衬底上的存储器阵列; 以及第二基板上的外围电路，其中第一基板和第二基板可以彼此附接，使得存储器阵列和外围电路彼此电连接。
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公开(公告)号：US20090243115A1
公开(公告)日：2009-10-01
申请号：US12292596
申请日：2008-11-21
申请人： Myoung-jae Lee , Young-soo Park , Chang-bum Lee , Seung-eon Ahn , Ki-hwan Kim , Bo-soo Kang
发明人： Myoung-jae Lee , Young-soo Park , Chang-bum Lee , Seung-eon Ahn , Ki-hwan Kim , Bo-soo Kang
IPC分类号： H01L23/52 , H01L21/822
CPC分类号： H01L23/49833 , G11C5/02 , G11C5/04 , G11C5/063 , H01L23/481 , H01L25/18 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/06572 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes: a memory array on a first substrate; and a peripheral circuit on a second substrate, wherein the first substrate and the second substrate may be attached to each other so that the memory array and the peripheral circuit are electrically connected to each other.
摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括：第一衬底上的存储器阵列; 以及第二基板上的外围电路，其中第一基板和第二基板可以彼此附接，使得存储器阵列和外围电路彼此电连接。
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公开(公告)号：US20090184305A1
公开(公告)日：2009-07-23
申请号：US12230223
申请日：2008-08-26
申请人： Chang-bum Lee , Young-soo Park , Myung-jae Lee , Xianyu Wenxu , Bo-soo Kang , Seung-eon Ahn , Ki-hwan Kim
发明人： Chang-bum Lee , Young-soo Park , Myung-jae Lee , Xianyu Wenxu , Bo-soo Kang , Seung-eon Ahn , Ki-hwan Kim
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/72
摘要： A resistive memory device includes a first electrode and a first insulation layer arranged on the first electrode. A portion of the first electrode is exposed through a first hole in the first insulation layer. A first variable resistance layer contacts the exposed portion of the first electrode and extends on the first insulation layer around the first hole. A first switching device electrically connects to the first resistive switching layer.
摘要翻译： 电阻式存储器件包括第一电极和布置在第一电极上的第一绝缘层。 第一电极的一部分通过第一绝缘层中的第一孔露出。 第一可变电阻层接触第一电极的暴露部分并在第一绝缘层周围在第一孔周围延伸。 第一开关装置电连接到第一电阻开关层。
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7.发明申请Resistive random access memory device and methods of manufacturing and operating the same 有权电阻式随机存取存储器件及其制造和操作方法公开(公告)号：US20080296550A1
公开(公告)日：2008-12-04
申请号：US12149809
申请日：2008-05-08
申请人： Chang-bum Lee , Young-soo Park , Xianyu Wenxu , Bo-soo Kang , Seung-eon Ahn
发明人： Chang-bum Lee , Young-soo Park , Xianyu Wenxu , Bo-soo Kang , Seung-eon Ahn
IPC分类号： H01L47/00
CPC分类号： H01L45/146 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253
摘要： Provided may be a resistive random access memory (RRAM) device and methods of manufacturing and operating the same. The resistive random access memory device may include at least one first electrode, at least one second electrode spaced apart from the at least one first electrode, a first structure including a first resistance-changing layer between the at least one first and second electrodes, and a first switching element electrically connected to the first resistance-changing layer, wherein at least one of the first and second electrodes include an alloy layer having a noble metal and a base metal.
摘要翻译： 提供可以是电阻随机存取存储器（RRAM）装置及其制造和操作方法。 电阻式随机存取存储器件可以包括至少一个第一电极，与至少一个第一电极间隔开的至少一个第二电极，包括在至少一个第一和第二电极之间的第一电阻变化层的第一结构，以及 电连接到第一电阻变化层的第一开关元件，其中第一和第二电极中的至少一个包括具有贵金属和贱金属的合金层。
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公开(公告)号：US08853759B2
公开(公告)日：2014-10-07
申请号：US12230223
申请日：2008-08-26
申请人： Chang-bum Lee , Young-soo Park , Myung-jae Lee , Xianyu Wenxu , Bo-soo Kang , Seung-eon Ahn , Ki-hwan Kim
发明人： Chang-bum Lee , Young-soo Park , Myung-jae Lee , Xianyu Wenxu , Bo-soo Kang , Seung-eon Ahn , Ki-hwan Kim
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/72
摘要： A resistive memory device includes a first electrode and a first insulation layer arranged on the first electrode. A portion of the first electrode is exposed through a first hole in the first insulation layer. A first variable resistance layer contacts the exposed portion of the first electrode and extends on the first insulation layer around the first hole. A first switching device electrically connects to the first resistive switching layer.
摘要翻译： 电阻式存储器件包括第一电极和布置在第一电极上的第一绝缘层。 第一电极的一部分通过第一绝缘层中的第一孔露出。 第一可变电阻层接触第一电极的暴露部分并在第一绝缘层周围在第一孔周围延伸。 第一开关装置电连接到第一电阻开关层。
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9.发明授权Resistive random access memory device and methods of manufacturing and operating the same 有权电阻式随机存取存储器件及其制造和操作方法公开(公告)号：US08173989B2
公开(公告)日：2012-05-08
申请号：US12149809
申请日：2008-05-08
申请人： Chang-bum Lee , Young-soo Park , Xianyu Wenxu , Bo-soo Kang , Seung-eon Ahn
发明人： Chang-bum Lee , Young-soo Park , Xianyu Wenxu , Bo-soo Kang , Seung-eon Ahn
CPC分类号： H01L45/146 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253
摘要： Provided may be a resistive random access memory (RRAM) device and methods of manufacturing and operating the same. The resistive random access memory device may include at least one first electrode, at least one second electrode spaced apart from the at least one first electrode, a first structure including a first resistance-changing layer between the at least one first and second electrodes, and a first switching element electrically connected to the first resistance-changing layer, wherein at least one of the first and second electrodes include an alloy layer having a noble metal and a base metal.
摘要翻译： 提供可以是电阻随机存取存储器（RRAM）装置及其制造和操作方法。 电阻式随机存取存储器件可以包括至少一个第一电极，与至少一个第一电极间隔开的至少一个第二电极，包括在至少一个第一和第二电极之间的第一电阻变化层的第一结构，以及 电连接到第一电阻变化层的第一开关元件，其中第一和第二电极中的至少一个包括具有贵金属和贱金属的合金层。
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10.发明申请Non-volatile memory device including diode-storage node and cross-point memory array including the non-volatile memory device 有权包括二极管存储节点和包括非易失性存储器件的交叉点存储器阵列的非易失性存储器件公开(公告)号：US20090116272A1
公开(公告)日：2009-05-07
申请号：US12216529
申请日：2008-07-07
申请人： Ki-hwan Kim , Young-soo Park , Bo-soo Kang , Myoung-jae Lee , Chang-bum Lee
发明人： Ki-hwan Kim , Young-soo Park , Bo-soo Kang , Myoung-jae Lee , Chang-bum Lee
CPC分类号： G11C11/36 , G11C11/14 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2013/009 , G11C2013/0092 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/73 , G11C2213/76 , H01L27/1021
摘要： Provided are a non-volatile memory device and a cross-point memory array including the same which have a diode characteristic enabling the non-volatile memory device and the cross-point memory array including the same to operate in a simple structure, without requiring a switching device separately formed so as to embody a high density non-volatile memory device. The non-volatile memory device includes a first electrode; a diode-storage node formed on the first electrode; and a second electrode formed on the diode-storage node.
摘要翻译： 提供了一种非易失性存储器件和包括该非易失性存储器件的交叉点存储器阵列，其具有使得非易失性存储器件的二极管特性和包括其的交叉点存储器阵列能够以简单的结构工作，而不需要 开关装置分开形成，以便体现高密度非易失性存储装置。 非易失性存储器件包括第一电极; 形成在所述第一电极上的二极管存储节点; 以及形成在二极管存储节点上的第二电极。
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