发明授权
- 专利标题： Sub volt flash memory system
- 专利标题（中）： 亚伏闪存系统
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申请号： US12623306申请日： 2009-11-20
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公开(公告)号： US07990773B2公开(公告)日： 2011-08-02
- 发明人: Hieu Van Tran , Sang T. Nguyen , Anh Ly , Hung Q. Nguyen
- 申请人： Hieu Van Tran , Sang T. Nguyen , Anh Ly , Hung Q. Nguyen
- 申请人地址： US CA Sunnyvale
- 专利权人： Silicon Storage Technology, Inc.
- 当前专利权人： Silicon Storage Technology, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： DLA Piper LLP (US)
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
Various circuits include MOS transistors that have a bulk voltage terminal for receiving a bulk voltage that is different from a supply voltage and ground. The bulk voltage may be selectively set so that some MOS transistors have a bulk voltage set to the supply voltage or ground and other MOS transistors have a bulk voltage that is different. The bulk voltage may be set to forward or reverse bias pn junctions in the MOS transistor. The various circuits include comparators, operational amplifiers, sensing circuits, decoding circuits and the other circuits. The circuits may be included in a memory system.
公开/授权文献
- US20100067308A1 Sub Volt Flash Memory System 公开/授权日：2010-03-18
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