发明授权
- 专利标题: Overlay measurement on double patterning substrate
- 专利标题(中): 双重图案化衬底上的覆盖测量
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申请号: US12248777申请日: 2008-10-09
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公开(公告)号: US07992115B2公开(公告)日: 2011-08-02
- 发明人: Eddy Cornelis Antonius Van Der Heijden , Johannes Anna Quaedackers , Dorothea Maria Christina Oorschot , Hieronymus Johannus Christiaan Meessen , Yin Fong Choi
- 申请人: Eddy Cornelis Antonius Van Der Heijden , Johannes Anna Quaedackers , Dorothea Maria Christina Oorschot , Hieronymus Johannus Christiaan Meessen , Yin Fong Choi
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method of measuring overlay between a first structure and a second structure on a substrate is provided. The structures include equidistant elements, such as parallel lines, wherein the equidistant elements of the first and second structure alternate. A design width CD1 of the elements of the first structure is different from a design width CD2 of the elements of the second structure. The difference in design width can be used to identify measurement points having incorrectly measured overlay errors.
公开/授权文献
- US20090100391A1 Overlay Measurement on Double Patterning Substrate 公开/授权日:2009-04-16
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