摘要:
A method of measuring overlay between a first structure and a second structure on a substrate is provided. The structures include equidistant elements, such as parallel lines, wherein the equidistant elements of the first and second structure alternate. A design width CD1 of the elements of the first structure is different from a design width CD2 of the elements of the second structure. The difference in design width can be used to identify measurement points having incorrectly measured overlay errors.
摘要:
In order to determine whether an exposure apparatus is projecting patterns correctly, a marker pattern is used on a mask for printing a specific marker structure onto a substrate. This marker is then measured by an inspection apparatus to determine whether there are errors in exposure-related properties such as focus and dose. The projection of the marker pattern is modified so as to accentuate the production of side lobe-induced features of the marker structure relative to the production of side lobe-inducted features of the product structure. The form of the marker structure is more responsive to exposure variation than the form of the product structure to exposure variation. The marker pattern includes both primary features and secondary features that augment the side lobe arising from the primary feature to print side lobe-induced features on either side of a primary marker structure. Alternatively, the marker pattern is modified by having a different attenuation factor with respect to the product pattern. Alternatively, the marker pattern is modified by providing a marker dose different from the product dose.
摘要:
A method for providing a pattern on a substrate is disclosed. The method includes providing a first pattern in a first layer of photoresist and a first layer of bottom anti-reflective coating material on the substrate, etching the first pattern into the substrate, providing a second layer of photoresist and a second layer of bottom anti-reflective coating material on the substrate, providing a second pattern in the second layers of photoresist and bottom anti-reflective coating material, and etching the second pattern into the substrate, the first and second patterns on the substrate together defining the pattern.
摘要:
A method of measuring overlay between a first structure and a second structure on a substrate is provided. The structures include equidistant elements, such as parallel lines, wherein the equidistant elements of the first and second structure alternate. A design width CD1 of the elements of the first structure is different from a design width CD2 of the elements of the second structure. The difference in design width can be used to identify measurement points having incorrectly measured overlay errors.
摘要:
A method for providing a pattern on a substrate is disclosed. The method includes providing a first pattern in a first layer of photoresist and a first layer of bottom anti-reflective coating material on the substrate, etching the first pattern into the substrate, providing a second layer of photoresist and a second layer of bottom anti-reflective coating material on the substrate, providing a second pattern in the second layers of photoresist and bottom anti-reflective coating material, and etching the second pattern into the substrate, the first and second patterns on the substrate together defining the pattern.