Invention Grant
- Patent Title: Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device
- Patent Title (中): 半导体装置，电极的制造方法以及半导体装置的制造方法
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Application No.: US12539275Application Date: 2009-08-11
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Publication No.: US07993948B2Publication Date: 2011-08-09
- Inventor: Shinji Saito , Shinya Nunoue , Toshiyuki Oka
- Applicant: Shinji Saito , Shinya Nunoue , Toshiyuki Oka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-172585 20050613
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for fabricating an electrode by (i) depositing a palladium film on a p-type semiconductor layer; (ii) introducing an oxygen gas onto the palladium film to provide an oxygen ambient; (iii) oxidizing the palladium film adjacent to the semiconductor layer by annealing the palladium film in the oxygen ambient; and (iv) forming a palladium oxide film directly in contact with the semiconductor layer.
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