发明授权
- 专利标题： Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device
- 专利标题（中）： 半导体装置，电极的制造方法以及半导体装置的制造方法
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申请号： US12539275申请日： 2009-08-11
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公开(公告)号： US07993948B2公开(公告)日： 2011-08-09
- 发明人: Shinji Saito , Shinya Nunoue , Toshiyuki Oka
- 申请人： Shinji Saito , Shinya Nunoue , Toshiyuki Oka
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2005-172585 20050613
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for fabricating an electrode by (i) depositing a palladium film on a p-type semiconductor layer; (ii) introducing an oxygen gas onto the palladium film to provide an oxygen ambient; (iii) oxidizing the palladium film adjacent to the semiconductor layer by annealing the palladium film in the oxygen ambient; and (iv) forming a palladium oxide film directly in contact with the semiconductor layer.
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