发明授权
- 专利标题： Phase change memory cell and manufacturing method thereof using minitrenches
- 专利标题（中）： 相变存储单元及其制造方法
-
申请号： US11045170申请日： 2005-01-27
-
公开(公告)号： US07993957B2公开(公告)日： 2011-08-09
- 发明人: Roberto Bez , Fabio Pellizzer , Marina Tosi , Romina Zonca
- 申请人： Roberto Bez , Fabio Pellizzer , Marina Tosi , Romina Zonca
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 优先权： EP02425087 20020220
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A process forms a phase change memory cell using a resistive element and a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first thin portion and the second thin portion are in direct electrical contact and define a contact area of sublithographic extension. The second thin portion is delimited laterally by oxide spacer portions surrounded by a mold layer which defines a lithographic opening. The spacer portions are formed after forming the lithographic opening, by a spacer formation technique.
公开/授权文献
信息查询
IPC分类:
