发明授权
- 专利标题: Integrated circuit contact system
- 专利标题(中): 集成电路接触系统
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申请号: US11286173申请日: 2005-11-22
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公开(公告)号: US07994047B1公开(公告)日: 2011-08-09
- 发明人: Christy Mei-Chu Woo , Ning Cheng , Huade Walter Yao
- 申请人: Christy Mei-Chu Woo , Ning Cheng , Huade Walter Yao
- 申请人地址: US CA Sunnyvale US CA Sunnyvale
- 专利权人: Spansion LLC,Advanced Micro Devices, Inc.
- 当前专利权人: Spansion LLC,Advanced Micro Devices, Inc.
- 当前专利权人地址: US CA Sunnyvale US CA Sunnyvale
- 代理机构: Farjami & Farjami LLP
- 主分类号: H01L23/485
- IPC分类号: H01L23/485
摘要:
An integrated circuit contact system is provided including forming a contact plug in a dielectric and forming a first barrier layer in a trench in the dielectric and on the contact plug. Further, the system includes removing a portion of the first barrier layer from the bottom of the first barrier layer and depositing the portion of the first barrier layer on the sidewall of the first barrier layer, and forming a second barrier layer over the first barrier layer and filling a corner area of the trench.
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