发明授权
US07994072B2 Stress transfer by sequentially providing a highly stressed etch stop material and an interlayer dielectric in a contact layer stack of a semiconductor device
有权
通过在半导体器件的接触层堆叠中顺序提供高应力蚀刻停止材料和层间电介质来进行应力传递
- 专利标题： Stress transfer by sequentially providing a highly stressed etch stop material and an interlayer dielectric in a contact layer stack of a semiconductor device
- 专利标题（中）： 通过在半导体器件的接触层堆叠中顺序提供高应力蚀刻停止材料和层间电介质来进行应力传递
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申请号： US12108622申请日： 2008-04-24
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公开(公告)号： US07994072B2公开(公告)日： 2011-08-09
- 发明人: Joerg Hohage , Michael Finken , Ralf Richter
- 申请人： Joerg Hohage , Michael Finken , Ralf Richter
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102007052051 20071031
- 主分类号： H01L21/469
- IPC分类号： H01L21/469
摘要：
By forming two or more individual dielectric layers of high intrinsic stress levels with intermediate interlayer dielectric material, the limitations of respective deposition techniques, such as plasma enhanced chemical vapor deposition, may be respected while nevertheless providing an increased amount of stressed material above a transistor element, even for highly scaled semiconductor devices.
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