发明授权
- 专利标题： Semiconductor probe having wedge shape resistive tip and method of fabricating the same
- 专利标题（中）： 具有楔形电阻尖端的半导体探针及其制造方法
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申请号： US11750404申请日： 2007-05-18
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公开(公告)号： US07994499B2公开(公告)日： 2011-08-09
- 发明人: Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park , Chul-min Park
- 申请人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park , Chul-min Park
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Sughrue Mion, PLLC
- 优先权： KR10-2006-0097412 20061002
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip. The probe also includes a cantilever having the resistive tip on an edge portion thereof, and an end portion of the resistive tip has a wedge shape.
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