发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US10587237申请日: 2005-02-01
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公开(公告)号: US07994617B2公开(公告)日: 2011-08-09
- 发明人: Yasuyuki Arai , Yuko Tachimura , Yohei Kanno , Mai Akiba
- 申请人: Yasuyuki Arai , Yuko Tachimura , Yohei Kanno , Mai Akiba
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2004-030369 20040206
- 国际申请: PCT/JP2005/001739 WO 20050201
- 国际公布: WO2005/076359 WO 20050818
- 主分类号: H01L23/02
- IPC分类号: H01L23/02
摘要:
An object of the present invention is providing a semiconductor device that is capable of improving the reliability of a semiconductor element and enhancing the mechanical strength without suppressing the scale of a circuit. The semiconductor device includes an integrated circuit sandwiched between first and second sealing films, an antenna electrically connected to the integrated circuit, the first sealing film sandwiched between a substrate and the integrated circuit, which includes a plurality of first insulating films and at least one second insulating film sandwiched therebetween, the second sealing film including a plurality of third insulating films and at least one fourth insulating film sandwiched therebetween. The second insulating film has lower stress than the first insulting film and the fourth insulating film has lower stress than the third insulating film. The first and third insulating films are inorganic insulating films.
公开/授权文献
- US20070159335A1 Semiconductor device 公开/授权日:2007-07-12
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