Invention Grant
- Patent Title: Thin film transistor substrate capable of avoiding aperture reduction
- Patent Title (中): 能够避免孔径减小的薄膜晶体管基板
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Application No.: US11940067Application Date: 2007-11-14
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Publication No.: US07995171B2Publication Date: 2011-08-09
- Inventor: Chul Ho Kim , Kook Chul Moon , Jae Hyun Kim , Ho Suk Maeng , Sang Hoon Lee , Kyung Hoon Kim , Keun Woo Park
- Applicant: Chul Ho Kim , Kook Chul Moon , Jae Hyun Kim , Ho Suk Maeng , Sang Hoon Lee , Kyung Hoon Kim , Keun Woo Park
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2006-0112859 20061115
- Main IPC: G02F1/1335
- IPC: G02F1/1335 ; G02F1/136

Abstract:
A thin film transistor (TFT) substrate that is capable of providing a wide viewing angle and high contrast ratio without a decrease is aperture ratio is presented. The TFT substrate may be, for example, used with a patterned vertical alignment (PVA) mode LCD. The TFT substrate includes gate lines and data lines extending in non-parallel directions and a pixel electrode formed in a pixel region. The pixel region has two transmission regions separated from each other by a reflection region, and at least one of the gate lines is formed in the reflection region. A storage capacitor may also be formed in the reflection region. This configuration avoids the use of a bridge region between the two transmission regions that is responsible for aperture ratio decrease in the conventional configuration.
Public/Granted literature
- US20080111956A1 THIN FILM TRANSISTOR SUBSTRATE CAPABLE OF AVOIDING APERTURE REDUCTION Public/Granted day:2008-05-15
Information query
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