发明授权
US07998661B2 Method of nano-patterning using surface plasmon effect and method of manufacturing nano-imprint master and discrete track magnetic recording media using the nano-patterning method
有权
使用表面等离子体效应的纳米图案化方法和使用纳米图案法制造纳米压印母版和离散轨道磁记录介质的方法
- 专利标题: Method of nano-patterning using surface plasmon effect and method of manufacturing nano-imprint master and discrete track magnetic recording media using the nano-patterning method
- 专利标题(中): 使用表面等离子体效应的纳米图案化方法和使用纳米图案法制造纳米压印母版和离散轨道磁记录介质的方法
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申请号: US12048421申请日: 2008-03-14
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公开(公告)号: US07998661B2公开(公告)日: 2011-08-16
- 发明人: Hae-sung Kim , Myung-bok Lee , Jin-seung Sohn
- 申请人: Hae-sung Kim , Myung-bok Lee , Jin-seung Sohn
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2007-0098901 20071001
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
A method of nano-patterning, a method of manufacturing a nano-imprinting master and a discrete track magnetic recording medium are all provided. The method of nano-patterning includes (a) sequentially forming on a substrate an etching object material layer, a photoresist layer, and a metal layer patterned to a first pattern having a structure in which line patterns are repeatedly arranged with a predetermined interval; (b) irradiating light onto a surface of the metal layer to excite surface plasmon so that the photoresist layer is exposed to a second pattern by the surface plasmon; (c) removing the metal layer and developing the photoresist layer; and (d) etching the etching object material layer using the photoresist layer patterned to the second pattern as a mask.
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