发明授权
- 专利标题： Method for manufacturing a semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US12219026申请日： 2008-07-15
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公开(公告)号： US07998844B2公开(公告)日： 2011-08-16
- 发明人: Hisashi Ohtani , Akiharu Miyanaga , Takeshi Fukunaga , Hongyong Zhang
- 申请人： Hisashi Ohtani , Akiharu Miyanaga , Takeshi Fukunaga , Hongyong Zhang
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP5-294633 19931029; JP5-303436 19931109; JP5-307206 19931112; JP6-162705 19940620
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36 ; H01L21/22 ; H01L21/38 ; H01L21/31 ; H01L21/469 ; H01L21/00
摘要：
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
公开/授权文献
- US20090035923A1 Method for manufacturing a semiconductor device 公开/授权日：2009-02-05
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