公开(公告)号：US06998639B2

公开(公告)日：2006-02-14

申请号：US10026802

申请日：2001-12-27

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

IPC分类号： H01L29/04

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

公开(公告)号：US20090035923A1

公开(公告)日：2009-02-05

申请号：US12219026

申请日：2008-07-15

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

IPC分类号： H01L21/205

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

公开(公告)号：US07998844B2

公开(公告)日：2011-08-16

申请号：US12219026

申请日：2008-07-15

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/22 ,  H01L21/38 ,  H01L21/31 ,  H01L21/469 ,  H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

摘要翻译： 一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够加速非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶 电影。

公开(公告)号：US5643826A

公开(公告)日：1997-07-01

申请号：US329644

申请日：1994-10-25

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/228

CPC分类号： H01L29/045 ,  H01L21/2022 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  H01L27/1296 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

摘要翻译： 一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够加速非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶 电影。

公开(公告)号：US20060131583A1

公开(公告)日：2006-06-22

申请号：US11322660

申请日：2006-01-03

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

IPC分类号： H01L29/04

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

公开(公告)号：US06335541B1

公开(公告)日：2002-01-01

申请号：US08633307

申请日：1996-04-15

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

IPC分类号： H01L2904

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

摘要翻译： 一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够促进非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶 电影。

公开(公告)号：US06285042B1

公开(公告)日：2001-09-04

申请号：US08928514

申请日：1997-09-12

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

IPC分类号： H01L2904

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

摘要翻译： 一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够加速非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶 电影。

公开(公告)号：US5923962A

公开(公告)日：1999-07-13

申请号：US430623

申请日：1995-04-28

申请人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

发明人： Hisashi Ohtani ,  Akiharu Miyanaga ,  Takeshi Fukunaga ,  Hongyong Zhang

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/2022 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78678 ,  H01L27/12 ,  Y10S148/016

摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

公开(公告)号：US07767559B2

公开(公告)日：2010-08-03

申请号：US12269294

申请日：2008-11-12

申请人： Hisashi Ohtani ,  Takeshi Fukunaga ,  Akiharu Miyanaga

发明人： Hisashi Ohtani ,  Takeshi Fukunaga ,  Akiharu Miyanaga

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L29/66757

摘要： A process for fabricating a semiconductor device comprising the steps of: introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：向非晶硅膜引入加速非晶硅膜结晶的金属元素; 对非晶硅膜进行热处理以获得结晶硅膜; 向结晶硅膜照射激光束或强光; 并对用激光束或强光照射的结晶硅膜进行热处理。

公开(公告)号：US07326604B2

公开(公告)日：2008-02-05

申请号：US10765952

申请日：2004-01-29

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Toru Mitsuki ,  Takeshi Fukunaga

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Toru Mitsuki ,  Takeshi Fukunaga

IPC分类号： H01L21/84

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78696

摘要： In a semiconductor device using a crystalline semiconductor film on a substrate 106 having an insulating surface, impurities are locally implanted into an active region 102 to form a pinning region 104. The pinning region 104 suppresses the spread of a depletion layer from the drain side to effectively prevent the short channel effect. Also, since a channel forming region 105 is intrinsic or substantially intrinsic, a high mobility is realized.

摘要翻译： 在具有绝缘表面的衬底106上使用结晶半导体膜的半导体器件中，将杂质局部注入到有源区102中以形成钉扎区104。 钉扎区域104抑制耗尽层从漏极侧的扩展，以有效地防止短沟道效应。 此外，由于沟道形成区域105是固有的或基本上固有的，因此实现高迁移率。