发明授权
- 专利标题: Method and apparatus for specimen fabrication
- 专利标题(中): 用于样品制造的方法和装置
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申请号: US12168232申请日: 2008-07-07
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公开(公告)号: US07999240B2公开(公告)日: 2011-08-16
- 发明人: Satoshi Tomimatsu , Kaoru Umemura , Yuichi Madokoro , Yoshimi Kawanami , Yasunori Doi
- 申请人: Satoshi Tomimatsu , Kaoru Umemura , Yuichi Madokoro , Yoshimi Kawanami , Yasunori Doi
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP9-196213 19970722; JP9-263184 19970929; JP9-263185 19970929
- 主分类号: H01J37/20
- IPC分类号: H01J37/20
摘要:
A system for analyzing a semiconductor device, including: a first ion beam apparatus including: a sample stage to mount a sample substrate; a vacuum chamber in which the sample stage is placed; an ion beam irradiating optical system to irradiate the sample substrate; a specimen holder that accommodates a plurality of specimens separated from the sample substrate by the irradiation of the ion beam; and a probe to extract the separated specimen from the sample substrate, and to transfer the separated specimen to the specimen holder; a second ion beam apparatus that carries out a finishing process to the specimen; and an analyzer to analyze the finished specimen, wherein the first ion beam apparatus separates the specimen and the probe in a vacuum condition.
公开/授权文献
- US20080296497A1 METHOD AND APPARATUS FOR SPECIMEN FABRICATION 公开/授权日:2008-12-04
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