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    Method and apparatus for specimen fabrication
    1.
    发明授权
    Method and apparatus for specimen fabrication 有权
    用于样品制造的方法和装置

    公开(公告)号：US07999240B2

    公开(公告)日：2011-08-16

    申请号：US12168232

    申请日：2008-07-07

    申请人： Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

    发明人： Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

    IPC分类号： H01J37/20

    CPC分类号： G01N1/32 ,  G01N1/28 ,  G01N2001/028 ,  G01N2001/045 ,  G01N2001/282 ,  H01J37/20 ,  H01J37/302 ,  H01J37/3056 ,  H01J2237/2007 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/31732 ,  H01J2237/31745 ,  H01J2237/31749

    摘要： A system for analyzing a semiconductor device, including: a first ion beam apparatus including: a sample stage to mount a sample substrate; a vacuum chamber in which the sample stage is placed; an ion beam irradiating optical system to irradiate the sample substrate; a specimen holder that accommodates a plurality of specimens separated from the sample substrate by the irradiation of the ion beam; and a probe to extract the separated specimen from the sample substrate, and to transfer the separated specimen to the specimen holder; a second ion beam apparatus that carries out a finishing process to the specimen; and an analyzer to analyze the finished specimen, wherein the first ion beam apparatus separates the specimen and the probe in a vacuum condition.

    摘要翻译： 一种用于分析半导体器件的系统，包括：第一离子束装置，包括：样品台，用于安装样品基板; 其中放置样品台的真空室; 离子束照射光学系统照射样品基板; 样本保持器，其容纳通过离子束的照射与样品基板分离的多个样本; 以及从所述样品基材中提取分离出的试样并将分离的试样转移到所述试样保持器的探针。 对样品进行精加工的第二离子束装置; 以及用于分析成品样品的分析器，其中所述第一离子束装置在真空条件下分离所述样品和所述探针。

    Liquid metal ion gun
    2.
    发明申请
    Liquid metal ion gun 有权
    液态金属离子枪

    公开(公告)号：US20080210883A1

    公开(公告)日：2008-09-04

    申请号：US12076481

    申请日：2008-03-19

    申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

    发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

    IPC分类号： G21G5/00

    CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

    摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

    摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

    Focused ion beam apparatus
    4.
    发明授权
    Focused ion beam apparatus 有权
    聚焦离子束装置

    公开(公告)号：US07235798B2

    公开(公告)日：2007-06-26

    申请号：US11151425

    申请日：2005-06-14

    申请人： Tohru Ishitani ,  Hiroyuki Muto ,  Yuichi Madokoro

    发明人： Tohru Ishitani ,  Hiroyuki Muto ,  Yuichi Madokoro

    IPC分类号： G21K5/10

    CPC分类号： H01J37/28 ,  H01J37/12 ,  H01J2237/04924 ,  H01J2237/121 ,  H01J2237/31749

    摘要： In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.

    摘要翻译： 为了在MEMS和半导体器件的结构分析和故障分析中实现更快的高精度铣削和高分辨率图像观察，将双透镜光学系统安装在聚焦离子束装置上，并且在光学系统中距离 离子源中的发射极顶点包括在聚光透镜中并且最靠近离子源设置的接地电极在5至14mm的范围内。

    Liquid metal ion gun
    5.
    发明授权
    Liquid metal ion gun 有权
    液态金属离子枪

    公开(公告)号：US07211805B2

    公开(公告)日：2007-05-01

    申请号：US11312367

    申请日：2005-12-21

    申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

    发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

    IPC分类号： H01J27/00 ,  G21G5/00 ,  G21K7/00

    CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

    摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

    摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

    METHOD AND APPARATUS FOR SPECIMEN FABRICATION
    7.
    发明申请
    METHOD AND APPARATUS FOR SPECIMEN FABRICATION 有权
    方法和装置用于样本制造

    公开(公告)号：US20110140006A1

    公开(公告)日：2011-06-16

    申请号：US13026568

    申请日：2011-02-14

    申请人： Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

    发明人： Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

    IPC分类号： G21K5/04

    CPC分类号： G01N1/32 ,  G01N1/28 ,  G01N2001/028 ,  G01N2001/045 ,  G01N2001/282 ,  H01J37/20 ,  H01J37/302 ,  H01J37/3056 ,  H01J2237/2007 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/31732 ,  H01J2237/31745 ,  H01J2237/31749

    摘要： A focused ion beam apparatus, including: a specimen transferring unit having a probe to which a micro-specimen extracted from a specimen, can be joined through a joining deposition film, for transferring the micro-specimen to a sample holder; and wherein, the specimen transferring unit holds the probe which is joined through the joining deposition film to the micro-specimen extracted from the specimen, and the sample stage moves so that the sample holder mounted on the holder clasp is provided into an irradiated range of the focused ion beam, and the specimen transferring unit approaches the probe to the sample holder, and the gas nozzle supplies the deposition gas so that the micro-specimen is fixed to the sample holder through a fixing deposition film, and the ion beam irradiating optical system irradiates the focused ion beam to the micro-specimen fixed to the sample holder for various procedures.

    摘要翻译： 一种聚焦离子束装置，其特征在于，包括：具有从样本中提取微量试样的探针的检体转印单元，能够通过接合沉积膜接合，将所述微观样品转印到样品保持体上; 并且其中，所述检体转印单元将通过所述接合沉积膜接合的所述探针保持在从所述检体提取的所述微量试样上，并且所述样品台移动，使得安装在所述保持器扣上的样品保持器被设置在 聚焦离子束和样品转印单元接近探针到样品保持器，并且气体喷嘴提供沉积气体，使得微量样品通过定影沉积膜固定到样品保持器，并且离子束照射光学 系统将聚焦的离子束照射到固定到样品保持器上的微量样品用于各种程序。