发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US12026942申请日: 2008-02-06
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公开(公告)号: US07999304B2公开(公告)日: 2011-08-16
- 发明人: Yoshio Ozawa , Akihito Yamamoto , Katsuaki Natori , Masayuki Tanaka , Katsuyuki Sekine , Daisuke Nishida , Ryota Fujitsuka
- 申请人: Yoshio Ozawa , Akihito Yamamoto , Katsuaki Natori , Masayuki Tanaka , Katsuyuki Sekine , Daisuke Nishida , Ryota Fujitsuka
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2007-028385 20070207
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
A semiconductor device includes a semiconductor substrate, and nonvolatile memory cells, each of the cells including a channel region having a channel length and a channel width, a tunnel insulating film, a floating gate electrode, a control gate electrode, an inter-electrode insulating film between the floating and control gate electrodes, and an electrode side-wall insulating film on side-wall surfaces of the floating and control gate electrodes, the electrode side-wall insulating film including first and second insulating films having first and second dielectric constants, the first dielectric constant being higher than the second dielectric constant, the second dielectric constant being higher than a dielectric constant of a silicon nitride film, the first insulating film being in a central region of a facing region between the floating and control gate electrodes, the second insulating region being in the both end regions of the facing region and protruding from the both end portions.
公开/授权文献
- US20080197403A1 SEMICONDUCTOR DEVICE 公开/授权日:2008-08-21