发明授权
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US12701730申请日: 2010-02-08
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公开(公告)号: US07999575B2公开(公告)日: 2011-08-16
- 发明人: Chenkong Teh , Hiroyuki Hara
- 申请人: Chenkong Teh , Hiroyuki Hara
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Turocy & Watson, LLP
- 优先权: JP2009-139452 20090610
- 主分类号: H03K19/20
- IPC分类号: H03K19/20 ; H03K19/096 ; H03K3/356
摘要:
A semiconductor integrated circuit device includes: a first inverter constituted by a first transistor configured to charge a charge point based on an input signal, and a second transistor configured to discharge a discharge point based on the input signal; a P-type third transistor and an N-type fourth transistor with drain-source paths provided in parallel between the charge point and the discharge point; and a second inverter configured to invert a potential of the charge point or the discharge point and supply the inverted potential to gates of the third and fourth transistors, and obtain a delay signal of the input signal from the charge point or the discharge point. The semiconductor integrated circuit device secures a sufficient delay time with a small area.
公开/授权文献
- US20100315127A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 公开/授权日:2010-12-16
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